B. Z. Nosho

HRL Laboratories (United States) — United States

Physics and Astronomy · Physical Sciences

19h-index1.0kcitations57works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(37), Advanced Semiconductor Detectors and Materials(37), Chalcogenide Semiconductor Thin Films(12), Nanowire Synthesis and Applications(12), Semiconductor materials and devices(10)

Publications57 total

HOT MWIR detectors on silicon substrates
2018· 6 cited
Dual-band MWIR/LWIR focal plane arrays based on III-V strained-layer superlattices
2018· 4 cited
Advances in III-V based dual-band MWIR/LWIR FPAs at HRL
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2017· 32 cited
Fabrication and performance of InAs/GaSb superlattice LWIR detectors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 1 cited
Fabrication and performance of InAs/GaSb-based superlattice LWIR detectors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2010· 8 cited
MBE Growth and Transfer of HgCdTe Epitaxial Films from InSb Substrates
Journal of Electronic Materials·2009· 12 cited
Fabrication of InAs/GaSb type-II superlattice LWIR planar photodiodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 3 cited
Full-wafer spatial mapping of macrodefects on HgCdTe epitaxial wafers grown by MBE
Journal of Electronic Materials·2006· 2 cited
Fabrication and characterization of two-color midwavelength/long wavelength HgCdTe infrared detectors
Journal of Electronic Materials·2006· 43 cited
3<sup>rd</sup>generation 1280 x 720 FPA development status at Raytheon Vision Systems
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 21 cited
Status of two-color and large format HgCdTe FPA technology at Raytheon Vision Systems
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2006· 19 cited
Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy
Journal of Electronic Materials·2005· 10 cited
Third generation FPA development status at Raytheon Vision Systems (Invited Paper)
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2005· 42 cited
IR absorption spectra of InAs/GaSb nanostructures
APS Texas Sections Fall Meeting Abstracts·2004
HgCdTe focal plane arrays for dual-color mid- and long-wavelength infrared detection
Journal of Electronic Materials·2004· 74 cited
Spectral crosstalk by radiative recombination in sequential-mode, dual mid-wavelength infrared band HgCdTe detectors
Journal of Electronic Materials·2004· 14 cited
Two-color HgCdTe infrared staring focal plane arrays
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 14 cited
Electronic versus geometric contrast in cross-sectional STM images of III-V semiconductor heterostructures
Physical review. B, Condensed matter·2003· 19 cited
X-ray diffraction analysis of lateral composition modulation in InAs/GaSb superlattices intended for infrared detector applications
IEE Proceedings - Optoelectronics·2003
Interface structures of III–V semiconductor heterostructures
International Journal of Quantum Chemistry·2003· 4 cited
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Frequent Co-authors

L. J. Whitman(16), B. R. Bennett(13), W. H. Weinberg(12), Rodney Pelzel(10), J. A. Roth(9), J. Eric Jensen(9), William Barvosa-Carter(7), B. V. Shanabrook(7), R. Rajavel(7), G. M. Venzor(6), E. A. Patten(6), W. A. Radford(6), S. M. Johnson(6), Allan S. Bracker(6), Sevag Terterian(6), P. M. Goetz(5), M. Goldenberg(5), W. H. Weinberg(5), Luis A. Zepeda-Ruiz(5), Dimitrios Maroudas(5)