B. R. Bennett

Virginia Tech — United States

Physics and Astronomy · Physical Sciences

43h-index11.0kcitations334works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(212), Advanced Semiconductor Detectors and Materials(116), Semiconductor materials and devices(89), Advancements in Semiconductor Devices and Circuit Design(78), Semiconductor materials and interfaces(39)

Publications334 total

Illustration of an object‐based approach to identify structural differences in tropical cyclone wind fields
Quarterly Journal of the Royal Meteorological Society·2022· 7 cited
Charge scattering mechanisms in shallow InAs quantum wells
Journal of Applied Physics·2020· 3 cited
An Exploration of Parent-Child Conversations at a Mathematics Exhibit
UA Campus Repository (The University of Arizona)·2020Open Access
Effect of illumination on the interplay between Dresselhaus and Rashba spin-orbit couplings in InAs quantum wells
Journal of Applied Physics·2019· 3 cited
Interfacial Disorder in InAs/GaSb Heterostructures Grown by Molecular Beam Epitaxy
2019· 1 cited
Effect of illumination on the interplay between Dresselhaus and Rashba spin-orbit coupling in InAs quantum wells
APS March Meeting Abstracts·2019
Annual Report of the Chairman of the Anglo-Belarusian Society for 2017
The Journal of Belarusian Studies·2018Open Access
Annual Report of the Chairman of the Anglo-Belarusian Society for 2017
The Journal of Belarusian Studies·2018Open Access
Transport Properties of Shallow InAs Quantum Wells for Spintronic Applications
Bulletin of the American Physical Society·2018
Understanding, Assessing, and Responding to Terrorism
2017· 15 cited
Annual report of the chairman of the Anglo-Belarusian Society for 2016
The Journal of Belarusian Studies·2017Open Access
Annual report of the chairman of the Anglo-Belarusian Society for 2016
The Journal of Belarusian Studies·2017Open Access
Single-Event Measurement and Analysis of Antimony-Based p-Channel Quantum-Well MOSFETs With High- $\kappa $ Dielectric
IEEE Transactions on Nuclear Science·2016· 2 cited
Single event transient response of InGaSb p-MOSFETs using pulsed laser excitation: Comparison of buried-channel and surface-channel structures
2016· 1 cited
Strained InGaSb/AlGa(As)Sb Quantum Wells for p-Channel Transistors
Journal of Electronic Materials·2016· 1 cited
Detection of ferromagnetic domain wall pinning and depinning with a semiconductor device
Journal of Applied Physics·2015
Annual Report of the Chairman of the Anglo-Belarusian Society for 2014–2015
The Journal of Belarusian Studies·2015Open Access
Single Event Measurement and Analysis of Antimony Based n-Channel Quantum-Well MOSFET With High-<formula formulatype="inline"><tex Notation="TeX">$\kappa$</tex> </formula> Dielectric
IEEE Transactions on Nuclear Science·2015· 4 cited
Annual Report of the Chairman of the Anglo-Belarusian Society for 2014–2015
The Journal of Belarusian Studies·2015Open Access
In situ Plasma Exposure for Improved Interfaces in Atomic Layer Deposited Dielectrics on GaSb
Bulletin of the American Physical Society·2015
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Frequent Co-authors

B. V. Shanabrook(17), J.B. Boos(11), L. J. Whitman(8), M. J. Yang(7), R. Magno(7), P. M. Thibado(6), Richard Soref(5), Mario G. Ancona(4), E. H. Aifer(4), W. Kruppa(3), Robert B. Bass(3), J. R. Meyer(3), I. Vurgaftman(3), E. Kneedler(3), B. T. Jonker(3), Berend T. Jonker(2), Y. D. Park(2), Γ. Κιοσέογλου(2), A. Petrou(2), P. R. Hammar(2)