W. Kruppa

United States Naval Research Laboratory — United States

Physics and Astronomy · Physical Sciences

21h-index2.5kcitations83works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(52), Advancements in Semiconductor Devices and Circuit Design(35), Semiconductor materials and devices(30), Radio Frequency Integrated Circuit Design(23), Advanced Semiconductor Detectors and Materials(22)

Publications83 total

Spatial localization of 1/f noise sources in AlSb/InAs high-electron-mobility transistors
Journal of Applied Physics·2009· 2 cited
Sb-based n- and p-channel HFETs for high-speed, low-power applications
2009· 3 cited
1/ <i>f</i> noise of Sb-based <i>p</i> -channel HFETs
Electronics Letters·2008· 1 cited
Low-Frequency Noise in AlSb/InAs and Related HEMTs
IEEE Transactions on Electron Devices·2007· 29 cited
Noise Characteristics of Nanocluster-Based Chemiresistors
Bulletin of the American Physical Society·2007
Scaling Properties of Gold Nanocluster Chemiresistor Sensors
IEEE Sensors Journal·2006· 34 cited
InAs HEMT narrowband amplifier with ultra-low power dissipation
Electronics Letters·2006· 21 cited
1/f noise characteristics of gold nanocluster chemical sensors
2006
Electrical noise in gold nanocluster sensors
Applied Physics Letters·2006· 12 cited
Antimonide-based compound semiconductors for electronic devices: A review
Solid-State Electronics·2005· 349 cited
Near-ideal breakdown Si/SiGe heterojunction bipolar transistors for microwave power
2005
Low-frequency noise in AlSb∕InAs high-electron-mobility transistor structure as a function of temperature and illumination
Applied Physics Letters·2004· 16 cited
Low-frequency noise characteristics of AlSb/InAs/Sb HEMTs as a function of TEM perature and illumination
2004· 2 cited
Low-frequency noise characteristics of AlSb/InAsSb HEMTs
Solid-State Electronics·2004· 14 cited
High speed, low power electronics using Sb-based semiconductors
2004· 1 cited
Low-power, high-speed Sb-based HEMTs and HBTs
2004
Effect of network topology on nanocluster film transport
2003
Electron transport in nanocluster films with random voids
IEEE Transactions on Nanotechnology·2003· 14 cited
Low-voltage, high-speed AlSb-InAsSb HEMTs
2003· 1 cited
Temperature dependence of low-frequency gain dispersion in ion-implanted InP JFETs
2003· 3 cited
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Frequent Co-authors

J.B. Boos(35), B. R. Bennett(19), Daeui Park(12), Robert B. Bass(11), S.C. Binari(9), Mario G. Ancona(7), H.B. Dietrich(6), Arthur W. Snow(6), M. J. Yang(6), Edward E. Foos(5), G. Kelner(4), B. V. Shanabrook(4), Doewon Park(3), A. E. Wickenden(3), R. W. Rendell(3), D. D. Koleske(2), R. L. Henry(2), R. Magno(2), K. Doverspike(2), L. J. Whitman(2)