K. Doverspike

Physics and Astronomy · Physical Sciences

25h-index3.2kcitations63works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(44), Semiconductor Quantum Structures and Devices(18), Semiconductor materials and devices(15), Metal and Thin Film Mechanics(14), Silicon Carbide Semiconductor Technologies(8)

Publications63 total

Gain Spectroscopy on InGaN/GaN Quantum Well Laser Diodes
2005
Nitride lasers on SiC substrates
2002
Improved 10-GHz Operation of GaN/AlGaN HEMTs on Silicon Carbide
Materials science forum·2000· 3 cited
Pendeoepitaxy of GaN and InGaN LEDs on SiC
Materials science forum·2000· 4 cited
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
IEEE Electron Device Letters·1999· 535 cited
Conf. on In-Plane Semiconductor Lasers III, January 27-29, 1999 in Proc. of Soc. Photo-Optical Instr. Eng
1999
Role of localized and extended electronic states in InGaN/GaN quantum wells under high injection, inferred from near-field optical microscopy
Applied Physics Letters·1998· 59 cited
Gain characteristics of InGaN/GaN quantum well diode lasers
Applied Physics Letters·1998· 60 cited
Gain Characteristics of InGaN/GaN QW Diode Lasers
APS March Meeting Abstracts·1998
Nitride-Based Emitters on SiC Substrates
Materials science forum·1998· 3 cited
Gain Spectroscopy on InGaN/GaN Quantum Well Laser Diodes
Conference on Lasers and Electro-Optics Europe·1998
Chapter 7 SiC-Based UV Photodiodes and Light-Emitting Diodes
Semiconductors and semimetals·1998· 2 cited
Gain characteristics of InGaN/GaN quantum well diode lasers
1998
Pulsed operation lasing in a cleaved-facet InGaN/GaNMQW SCH laser grown on 6H-SiC
Electronics Letters·1997· 135 cited
Vacancy structures on the GaN(0001) surface
Journal of materials research/Pratt's guide to venture capital sources·1997· 15 cited
GaN FETs for microwave and high-temperature applications
Solid-State Electronics·1997· 144 cited
The First Nitride Laser Diode on Silicon Carbide
MRS Proceedings·1997· 3 cited
Chapter 9 Doping in the III-Nitrides
Semiconductors and semimetals·1997· 6 cited
Status of Nitride Based Light Emitting and Laser Diodes on SiC
MRS Proceedings·1997· 16 cited
Demonstration of a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
Bristol Research (University of Bristol)·1997· 1 cited
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Frequent Co-authors

D. Kurt Gaskill(18), L.B. Rowland(15), Jaime A. Freitas(9), A. E. Wickenden(8), J. A. Edmond(8), S.T. Sheppard(7), G. E. Bulman(7), M. Leonard(7), T. W. Weeks(6), Hoyoul Kong(6), H. Dieringer(6), K. Dwight(6), A. Wold(6), S.C. Binari(5), Weijin Qian(4), Marek Skowroński(4), G. Kelner(4), J.T. Swindell(4), J. A. Freitas(3), D. K. Wickenden(3)