MACOM (United States) — United States
Physics and Astronomy · Physical Sciences
19h-index3.8kcitations70works1.02yr avg
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Research Topics
GaN-based semiconductor devices and materials(48), Silicon Carbide Semiconductor Technologies(36), Radio Frequency Integrated Circuit Design(24), Semiconductor materials and devices(18), Semiconductor Quantum Structures and Devices(17)
Publications69 total
IEEE Transactions on Electron Devices·2023· 15 cited
2023· 1 cited
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 12 cited
IEEE Electron Device Letters·2022· 36 cited
95 Percent Efficiency, 10MHz Switching Rate and 30W, Fully Integrated Buck Converters Using E/D-mode GaN HEMTs
2019
Microelectronics Reliability·2018· 13 cited
IEEE Transactions on Microwave Theory and Techniques·2012· 963 cited
Commercial GaN Devices For Switching and Low Noise Applications
2011· 20 cited
2010 IEEE MTT-S International Microwave Symposium·2010· 2 cited
2010 IEEE MTT-S International Microwave Symposium·2010· 3 cited
Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium·2008· 18 cited
SiC and GaN Wide Bandgap Technology Commercial Status
2008· 7 cited
Proceedings of the IEEE National Radar Conference·2007· 42 cited
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Frequent Co-authors
John W. Palmour(16), W.L. Pribble(13), R.P. Smith(11), J. Milligan(11), Scott T. Allen(11), M. R. Melloch(8), James A. Cooper(8), K. Doverspike(7), Z. Ring(7), W. Wondrak(7), A. Saxler(6), Simon M. Wood(6), G. E. Bulman(6), J. A. Edmond(6), M. Leonard(6), U. Schmid(6), Yifeng Wu(5), Hoyoul Kong(5), H. Dieringer(5), Jim Milligan(5)