John W. Palmour

Cree (China) — China

Engineering · Physical Sciences

55h-index13.9kcitations478works0.02yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(440), Semiconductor materials and devices(176), Multilevel Inverters and Converters(112), Electromagnetic Compatibility and Noise Suppression(92), Semiconductor materials and interfaces(80)

Publications478 total

650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout
Key engineering materials·2023· 1 citedOpen Access
Reliability and Standardization for SiC Power Devices
Materials science forum·2023· 5 citedOpen Access
Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs
Materials science forum·2023· 5 citedOpen Access
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes
2023· 6 cited
Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout
Materials science forum·2022· 3 citedOpen Access
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 11 cited
DC and RF Reliability Assessment of 5G-MMW capable GaN HEMT Process (Invited)
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 12 cited
Accelerated Testing of SiC Power Devices
2020· 17 cited
Accelerated Testing of SiC Power Devices under High-Field Operating Conditions
Materials science forum·2020· 3 cited
Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
Materials science forum·2019· 16 cited
Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions
Materials science forum·2019· 5 cited
15 kV n-GTOs in 4H-SiC
Materials science forum·2019· 14 cited
Reliability of SiC Power Devices against Cosmic Ray Neutron Single-Event Burnout
Materials science forum·2018· 51 cited
Blocking Performance Improvements for 4H-SiC P-GTO Thyristors with Carrier Lifetime Enhancement Processes
Materials science forum·2018· 8 cited
Performance and Reliability Impacts of Extended Epitaxial Defects on 4H-SiC Power Devices
Materials science forum·2018· 37 cited
New SiC 1200 V Power MOSFET & Compact 3.25 mOhm, 41 mm Power Module for Industrial Applications
PCIM Europe 2018; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2018
650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules
Materials science forum·2018
Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes
Materials science forum·2018
Reliability comparison of 28 V–50 V GaN-on-SiC S-band and X-band technologies
Microelectronics Reliability·2018· 13 cited
Reliability studies of SiC vertical power MOSFETs
2018· 63 cited
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Frequent Co-authors

Scott T. Allen(13), Ranbir Singh(10), Jim Richmond(10), Edward Van Brunt(9), Michael O’Loughlin(9), Sei‐Hyung Ryu(9), Lin Cheng(8), Mrinal K. Das(7), Anant Agarwal(7), Vipindas Pala(6), Brett Hull(6), R. F. Davis(5), J. A. Edmond(5), Charles Scozzie(5), Hoyoul Kong(5), James A. Cooper(4), M. R. Melloch(4), K. G. Irvine(4), Daniel J. Lichtenwalner(4), Albert A. Burk(4)