Brett Hull

Wolfram Research (United States) — United States

Engineering · Physical Sciences

28h-index2.8kcitations136works3.42yr avg
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Research Topics

Silicon Carbide Semiconductor Technologies(127), Semiconductor materials and devices(53), Multilevel Inverters and Converters(34), Electromagnetic Compatibility and Noise Suppression(25), Advancements in Semiconductor Devices and Circuit Design(20)

Publications136 total

Lifetime Modeling of MOS Based SiC Vertical Power Devices under High Voltage Blocking Stress
Key engineering materials·2025Open Access
Gate oxide lifetime modeling of vertical SiC-MOS under accelerated reverse bias (ARB)
Microelectronics Reliability·2025
Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 1 citedOpen Access
Investigation into Relationship of the Switching Performance and Short-Circuit Withstand Time on 1.2 kV 4H-SiC Power MOSFETs
2024· 11 cited
Hole-Induced Threshold Voltage Instability Under High Positive and Negative Gate Stress in SiC MOSFETs
2024· 5 cited
Erratum: “Temperature dependence of avalanche breakdown in 4H-SiC devices” [J. Appl. Phys. 133, 235705 (2023)]
Journal of Applied Physics·2023Open Access
Temperature dependence of avalanche breakdown in 4H-SiC devices
Journal of Applied Physics·2023· 8 cited
650V Vertical SiC MOSFETs and Diodes with Improved Terrestrial-Neutron Single-Event Burnout
Key engineering materials·2023· 1 citedOpen Access
Reliability and Standardization for SiC Power Devices
Materials science forum·2023· 5 citedOpen Access
Outlook for Dielectric/SiC Interfaces for Future Generation MOSFETs
Materials science forum·2023· 5 citedOpen Access
High Temperature and High Humidity Reliability Evaluation of Large-Area 1200V and 1700V SiC Diodes
2023· 6 cited
Gate Bias Effects on SiC MOSFET Terrestrial-Neutron Single-Event Burnout
Materials science forum·2022· 3 citedOpen Access
Improvements to the Analytical Model to Describe UIS Events
IEEE Transactions on Electron Devices·2022· 5 citedOpen Access
Negative Gate Bias TDDB evaluation of n-Channel SiC Vertical Power MOSFETs
2022 IEEE International Reliability Physics Symposium (IRPS)·2022· 11 cited
Accelerated Testing of SiC Power Devices
2020· 17 cited
Accelerated Testing of SiC Power Devices under High-Field Operating Conditions
Materials science forum·2020· 3 cited
750 V, 10.5 mOhm SiC Power MOSFET for use in Electric Vehicles
PCIM Europe digital days 2020; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management·2020
Design Comparison of Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFETs) for Linear-Mode Operation
2019
Gate Oxide Reliability of SiC MOSFETs and Capacitors Fabricated on 150mm Wafers
Materials science forum·2019· 16 cited
Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions
Materials science forum·2019· 5 cited
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Frequent Co-authors

John W. Palmour(34), Sei‐Hyung Ryu(20), Scott T. Allen(18), Mrinal K. Das(17), Jim Richmond(17), Daniel J. Lichtenwalner(14), Edward Van Brunt(11), Anant Agarwal(10), Michael O’Loughlin(10), D.E. Grider(8), Vipindas Pala(7), Shadi Sabri(7), Sumi Krishnaswami(7), Joseph J. Sumakeris(6), D. A. Gajewski(6), Lin Cheng(5), Robert Callanan(5), Albert A. Burk(5), Allen R. Hefner(5), Adrian R. Powell(4)