G. E. Bulman

RTI International — United States

Physics and Astronomy · Physical Sciences

21h-index2.1kcitations87works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(45), Semiconductor Quantum Structures and Devices(33), Semiconductor materials and devices(19), Advanced Semiconductor Detectors and Materials(15), Ga2O3 and related materials(15)

Publications87 total

Superlattice-based thin-film thermoelectric modules with high cooling fluxes
Nature Communications·2016· 187 citedOpen Access
SiC-Based Topologies for Grid-Tied Energy Storage Applications (GER-ES).
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2015
Thermoelectric energy harvesting for a solid waste processing toilet
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 5 cited
Thermal Misfit Strain Relaxation in Ge/(001)Si Heterostructures
Journal of Electronic Materials·2014· 5 cited
High-efficiency energy harvesting using TAGS-85/half-Heusler thermoelectric devices
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2014· 13 cited
Combining previously unpaired materials enables better energy harvesting
SPIE Newsroom·2014
High Heat Flux, High Temperature Cooling of Electronics With Thermoelectric Devices
IEEE Electron Device Letters·2014· 6 cited
Defect Characterization in Ge/(001)Si Epitaxial Films Grown by Reduced-Pressure Chemical Vapor Deposition
Journal of Electronic Materials·2013· 6 cited
Controlled improvement in specific contact resistivity for thermoelectric materials by ion implantation
Applied Physics Letters·2013· 42 cited
Thermal Management of Ultra Intense Hot Spots With Two-Phase Multi-Microchannels and Embedded Thermoelectric Cooling
2013· 5 cited
Controlled improvement in specific contact resistivity for thermoelectric
2013
Poisson Ratio of Epitaxial Germanium Films Grown on Silicon
Journal of Electronic Materials·2012· 19 citedOpen Access
Improvement in leakage characteristics of Ge-on-Si photodetectors
2012
Superlattice thermoelectric materials and devices based on Bi2Te3 thin film
2012
Metallorganic chemical vapor deposition of InAs/GaSb superlattices on GaAs substrates using a two-step InAs buffer layer
Thin Solid Films·2011· 4 cited
Progress in Bi 2 Te 3 -based superlattice thermoelectric materials
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2011· 1 cited
Investigation into the thermoelectric properties of GaSb/InAs superlattice structures
MRS Proceedings·2011
Development of low dark current SiGe-detector arrays for visible-NIR imaging sensor
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2009· 14 citedOpen Access
Three-Stage Thin-Film Superlattice Thermoelectric Multistage Microcoolers with a ΔT max of 102 K
Journal of Electronic Materials·2009· 16 cited
Large cooling differentials and high heat flux capability with p-type Bi 2 Te 3 /Sb 2 Te 3 and n-type Bi 2 Te 3 /Bi 2 Se x Te 3-x Superlattice Thermoelectric Devices
APS·2007
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Frequent Co-authors

Hoyoul Kong(8), J. A. Edmond(8), R. Venkatasubramanian(8), C. Youtsey(7), I. Adesida(7), M. Leonard(7), L. W. Cook(6), G. E. Stillman(5), K. Doverspike(5), V. M. Robbins(4), H. Dieringer(4), G. E. Stillman(4), T. E. Zipperian(4), L. R. Dawson(4), Lucia Romano(3), S.T. Sheppard(3), T. W. Weeks(3), Jayesh Bharathan(3), J. Narayan(3), G. A. Rozgonyi(3)