G. E. Stillman

University of Illinois Urbana-Champaign — United States

Physics and Astronomy · Physical Sciences

29h-index2.9kcitations118works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(71), Semiconductor materials and devices(28), Advanced Semiconductor Detectors and Materials(28), Semiconductor Lasers and Optical Devices(25), Photonic and Optical Devices(21)

Publications118 total

Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD
2002
Heterointerface quality of InGaP–GaAs superlattices determined by photopumping, x-ray analysis, and transmission electron microscopy
Applied Physics Letters·1999· 8 cited
Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1999· 3 cited
Effects of alloy ambient on PdGe contacts on n-type GaAs
Applied Physics Letters·1998· 4 cited
Red-Shifting and Broadening of Quantum Well Infrared Photodetector's Response via Impurity-Free Vacancy Disordering
NASA Technical Reports Server (NASA)·1998
Redshifting and broadening of quantum-well infrared photodetector's response via impurity-free vacancy disordering
IEEE Journal of Selected Topics in Quantum Electronics·1998· 19 cited
InGaP/GaAs Carbon-Doped Heterostructures for Heterojunction Bipolar Transistors
1998· 1 cited
Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector
MRS Proceedings·1997· 3 cited
Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by <i>ex</i> <i>situ</i> annealing and the effects on device characteristics
Applied Physics Letters·1996· 27 cited
Properties of Gallium Arsenide -3rd ed.- No.16 No.16
1996
Long Wavelength Shifting and Broadening of Quantum Well Infrared Photodetector Response Via Rapid Thermal Annealing
MRS Proceedings·1996
Properties of gallium arsenide
Medical Entomology and Zoology·1996· 341 cited
Comparison of N- And P-Type Ingaas/Inp Quantum Well Infrared Photodetectors
MRS Proceedings·1996
Nonthermal microwave modulation of photoluminescence in III-V semiconductors
Physical review. B, Condensed matter·1993· 10 cited
The three to five semiconductor quantum well lasers and related optoelectronic devices on silicon
Final Report·1992
III-V semiconductor quantum-well lasers and related optoelectronic devices (on silicon). Oxide-defined semiconductor quantum-well lasers and optoelectronic devices: Al-based III-V native oxides. Final report
uill·1992
Surface-interface states and a model for surface effects in semi-insulating bulk GaAs
Applied Physics Letters·1992· 2 cited
Carrier diffusion effects in III–V semiconductor structures measured by the point contact current voltage technique
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·1992· 1 cited
Electronic Transport in III-V Semiconductors and their Lattice Matched Heterojunctions
Defense Technical Information Center (DTIC)·1992
Photo-Hall studies of high-purity GaAs
Journal of Applied Physics·1991· 14 cited
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Frequent Co-authors

C. M. Wolfe(11), N. Holonyak(9), V. M. Robbins(7), J. A. Rossi(6), M. A. Haase(6), K. Hess(4), L. W. Cook(4), G. E. Bulman(4), M.D. Sirkis(4), T. H. Windhorn(3), N. Tabatabaie(3), P.D. Dapkus(3), J. J. Coleman(3), N. Pan(3), Kevin F. Brennan(2), R.A. Milano(2), A.G. Foyt(2), Eric R. Anderson(2), C. J. Nuese(2), M. R. Johnson(2)