T. H. Windhorn

Physics and Astronomy · Physical Sciences

16h-index791citations29works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(26), Semiconductor Lasers and Optical Devices(14), Photonic and Optical Devices(10), Advanced Semiconductor Detectors and Materials(6), GaN-based semiconductor devices and materials(5)

Publications29 total

+21 dBm erbium power amplifier pumped by a diode-pumped Nd:YAG laser
IEEE Photonics Technology Letters·1992· 39 citedOpen Access
Monolithic two-dimensional surface-emitting arrays of GaAs/AlGaAs diode lasers
Applied Physics Letters·1987· 40 cited
Monolithic Integration Of Si And GaAs Devices
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1987
VA-5 Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's
IEEE Transactions on Electron Devices·1986· 1 cited
Monolithic integration of GaAs/AlGaAs double-heterostructure LED's and Si MOSFET's
IEEE Electron Device Letters·1986· 64 cited
AlGaAs Optoelectronic Devices On Monolithic GaAs/Si Substrates
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1986
Monolithic GaAs/AlGaAs diode laser/deflector devices for light emission normal to the surface
Applied Physics Letters·1986· 37 cited
GaAs/AlGaAs Diode Lasers on Monolithic GaAs/Si Substrates
MRS Proceedings·1986· 6 cited
Monolithic Integration of Si and GaAs Devices
MRS Proceedings·1986· 8 cited
Room-temperature operation of GaAs/AlGaAs diode lasers fabricated on a monolithic GaAs/Si substrate
Applied Physics Letters·1985· 85 cited
VIB-8 GaAs MESFET's and AlGaAs double-heterostructure diode lasers fabricated on monolithic GaAs/Si substrates
IEEE Transactions on Electron Devices·1984
AlGaAs double-heterostructure diode lasers fabricated on a monolithic GaAs/Si substrate
Applied Physics Letters·1984· 104 cited
High-Field Transport in GaAs, InP, and InxGa1-xAsyP1-y
1984· 3 cited
Electron transport in InP at high electric fields
Applied Physics Letters·1983· 46 cited
High-field electron transport in In<i>x</i>Ga1−<i>x</i>As<i>y</i>P1−<i>y</i> (λ<i>g</i> =1.2 μm)
Applied Physics Letters·1982· 7 cited
Temperature dependent electron velocity-field characteristics for In0.53Ga0.47AS at high electric fields
Journal of Electronic Materials·1982· 32 cited
High field temperature dependent electron drift velocities in GaAs
Applied Physics Letters·1982· 49 cited
Electron Drift Velocities at High Electric Fields in Gallium-Arsenide and Indium-Gallium - Arsenide
1982· 1 cited
The electron velocity-field characteristic for n-In<sub>0.53</sub>Ga<sub>0.47</sub>As at 300 K
IEEE Electron Device Letters·1982· 84 cited
Electron drift velocities in In&lt;inf&gt;0.53&lt;/inf&gt;Ga&lt;inf&gt;0.47&lt;/inf&gt;As at very high electric fields
1981· 1 cited
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Frequent Co-authors

L. W. Cook(8), G. E. Stillman(8), G. E. Stillman(7), G. W. Turner(6), G. Metze(5), B-Y. Tsaur(5), H. K. Choi(5), R.A. Milano(4), M. Feng(4), Eric R. Anderson(3), Russell D. Dupuis(3), P.D. Dapkus(3), M. M. Tashima(3), Thomas Roth(2), W. D. Goodhue(2), B. G. Streetman(2), John C. C. Fan(1), Bor-Yeu Tsaur(1), L. M. Zinkiewicz(1), O. L. Gaddy(1)