J. A. Freitas

Physics and Astronomy · Physical Sciences

13h-index1.1kcitations37works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(26), Semiconductor materials and devices(14), Ga2O3 and related materials(13), ZnO doping and properties(11), Semiconductor Quantum Structures and Devices(4)

Publications37 total

Relato de experiência - Educação em saúde grupal sobre amamentação e cuidados com as mamas no puerpério
2023Open Access
Vertical breakdown of GaN on Si due to V-pits
Journal of Applied Physics·2020· 29 citedOpen Access
Improved theoretical model of InN optical properties
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2014
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
Journal of Crystal Growth·2011· 133 cited
Application of CL/EBIC-SEM techniques for characterization of irradiation induced defects in triple junction solar cells
2010
Seeded growth of GaN single crystals from solution at near atmospheric pressure
Journal of Crystal Growth·2008· 19 cited
Dielectric studies of metal/n-GaN/metal Schottky contact in the radio frequency range
Journal of Crystal Growth·2008· 2 cited
Growth of GaN on Porous SiC by Molecular Beam Epitaxy
2008· 5 citedOpen Access
Atomic structure of pyramidal defects in GaN:Mg: Influence of annealing
physica status solidi (a)·2006Open Access
Micro-Raman Studies of Thermal Stress Effects in GaN Heteroepitaxial Layers and Self-heating Effects in AlGaN/GaN HEMT Structures
ECS Meeting Abstracts·2006· 1 cited
Photoacoustic and transmission studies of SiC polytypes
Materials Research·2003· 1 citedOpen Access
Donor-related recombination processes in hydride-vapor-phase epitaxial GaN
Physical review. B, Condensed matter·2002· 96 cited
Recrystallization prospects for freestanding low-temperature GaN grown using ZnO buffer layers
Journal of Crystal Growth·2002· 30 cited
Mössbauer Study of Brazilian Emeralds
2002
Magnetic resonance studies of defects in GaN with reduced dislocation densities
Physica B Condensed Matter·2001· 9 cited
LEO of III-nitride on Al2O3 and Si substrates
Proceedings of SPIE - The International Society for Optical Engineering·2000
Optically detected magnetic resonance of shallow donor – shallow acceptor and deep (2.8–3.2eV) recombination from Mg-doped GaN
Physica B Condensed Matter·1999· 25 cited
Optical Studies of Undoped and Doped Wide Bandgap Carbide and Nitride Semiconductors
Brazilian Journal of Physics·1998· 13 citedOpen Access
Magnetic resonance studies of high-resistivity GaN films grown on Al{sub 2}O{sub 3}
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·1997
Magnetic Resonance Studies of the 3.0 eV PL Band in High-Resistivity GaN
APS March Meeting Abstracts·1997
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Frequent Co-authors

E. R. Glaser(9), A. E. Wickenden(7), T. A. Kennedy(6), M. Asif Khan(4), D. T. Olson(4), J. N. Kuznia(4), W. E. Carlos(4), G. C. B. Braga(4), K. Doverspike(3), D. Kurt Gaskill(3), W. J. Moore(3), A. Y. Polyakov(3), M. Shin(3), Marek Skowroński(3), David W. Greve(3), D. D. Koleske(3), Boris N. Feigelson(2), B. V. Shanabrook(2), R. G. Wilson(2), R.L. Henry(2)