R. L. Henry

Physics and Astronomy · Physical Sciences

14h-index1.3kcitations45works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(34), Semiconductor materials and devices(20), Semiconductor Quantum Structures and Devices(10), Ga2O3 and related materials(7), ZnO doping and properties(6)

Publications45 total

Defects in vertical zone melt (vzm) GaAs
2020
Design of Gallium Nitride Resonant Cavity Light Emitting Diodes on Si Substrates
arXiv (Cornell University)·2020Open Access
Characteristics of<i>in situ</i>Mg-doped GaN epilayers subjected to ultra-high-temperature microwave annealing using protective caps
Semiconductor Science and Technology·2007· 24 cited
Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC
Applied Physics Letters·2007· 10 cited
Plasmonically enhanced emission from a group-III nitride nanowire emitter
Nanotechnology·2007· 13 cited
Analysis of the Lateral Resistivity of a Two-Layer GaN Film using a Transmission Line Model.
Journal of Applied Physics·2007
Dislocations in III-nitride films grown on 4H-SiC mesas with and without surface steps
Journal of Crystal Growth·2007· 15 cited
Rare-earth chloride seeded growth of GaN nano- and micro-crystals
Applied Surface Science·2007· 10 cited
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
Materials science forum·2006· 2 cited
Laser ablation of via holes in GaN and AlGaN∕GaN high electron mobility transistor structures
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena·2006· 16 cited
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
Applied Physics Letters·2005· 29 citedOpen Access
Role of open volume defects in Mg-doped GaN films studied by positron annihilation spectroscopy
Physical Review B·2005· 36 cited
The effects of oxygen, nitrogen, and hydrogen annealing on Mg acceptors in GaN as monitored by electron paramagnetic resonance spectroscopy
Journal of Electronic Materials·2005· 14 cited
A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth
MRS Proceedings·2004· 1 cited
Current collapse induced in AlGaN/GaN HEMTs by short-term DC bias stress
2003· 6 cited
Electroreflectance of hexagonal gallium nitride at the fundamental and E1 spectral regions
Applied Physics Letters·2003· 1 cited
Ga vacancies and grain boundaries in GaN
Applied Physics Letters·2003· 25 cited
Investigation of the activation and passivation of the Mg acceptor in GaN:Mg using EPR
APS·2002
Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures
Microelectronic Engineering·2002· 14 cited
Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC
Applied Physics Letters·2002· 45 cited
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Frequent Co-authors

A. E. Wickenden(22), D. D. Koleske(16), Charles R. Eddy(9), S.C. Binari(8), Daniel Koleske(7), R. T. Holm(7), M. E. Twigg(6), Jaime A. Freitas(5), Michael A. Mastro(5), P. B. Klein(4), M. A. Mastro(4), Nabil Bassim(4), K. Ikossi‐Anastasiou(4), E. R. Glaser(3), James C. Culbertson(3), Philip G. Neudeck(3), J. A. Powell(3), Andrew J. Trunek(3), O. J. Glembocki(3), K. Ikossi(2)