M. A. Mastro

United States Naval Research Laboratory — United States

Physics and Astronomy · Physical Sciences

12h-index469citations30works0.02yr avg
OpenAlex↗Google Scholar↗Lab page↗

Accepting Students?

No reports yet. Know if this professor is taking students?

Research Topics

GaN-based semiconductor devices and materials(24), Ga2O3 and related materials(11), Semiconductor materials and devices(10), ZnO doping and properties(9), Metal and Thin Film Mechanics(7)

Publications30 total

Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy
Applied Physics Letters·2013· 58 cited
Temperature profiling in AlGaN/GaN HEMTs with nanocrystalline diamond heat spreading layers by Raman spectroscopy
2011· 1 cited
Transverse-microcavity modulation of photoluminescence from GaN nanowires
Applied Physics Letters·2010· 3 cited
Investigation of deep levels in nitrogen doped 4H–SiC epitaxial layers grown on 4° and 8° off-axis substrates
Journal of Applied Physics·2010· 6 cited
Dielectric-substrate-induced surface-enhanced Raman scattering
Physical Review B·2009· 18 cited
Using Multiple Contrast Mechanisms via Forescatter Electron Channeling Contrast Imaging to Resolve the Burgers Vector of GaN Threading Dislocations
Microscopy and Microanalysis·2009
Luminescence characteristics of zinc oxide nanocrystals deposited on glass via a solution method
Physica E Low-dimensional Systems and Nanostructures·2008· 9 cited
Dielectric and geometric properties of plasmonics in metal/dielectric nanowires composites used in surface-enhanced Raman spectroscopy
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2007· 1 cited
Nondestructive analysis of threading dislocations in GaN by electron channeling contrast imaging
Applied Physics Letters·2007· 55 cited
Threading dislocation behavior in AlN nucleation layers for GaN growth on 4H-SiC
Applied Physics Letters·2007· 10 cited
Rare-earth chloride seeded growth of GaN nano- and micro-crystals
Applied Surface Science·2007· 10 cited
X-ray diffraction study of crystal plane distortion in silicon carbide substrates
Journal of Applied Physics·2006· 2 cited
MOCVD growth of thick AlN and AlGaN superlattice structures on Si substrates
Journal of Crystal Growth·2005· 48 cited
High-reflectance III-nitride distributed Bragg reflectors grown on Si substrates
Applied Physics Letters·2005· 29 citedOpen Access
Oxynitride mediated epitaxy of gallium nitride on silicon(111) substrates in a merged hydride/metal-organic vapor phase epitaxy system
Materials Science and Engineering B·2005· 2 cited
Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2005· 27 cited
Growth and characterization of single-crystalline gallium nitride using (100) LiAlO2 substrates
Journal of Crystal Growth·2004· 33 cited
Influence of polarity on GaN thermal stability
Journal of Crystal Growth·2004· 42 cited
A Model for the Critical Height for Dislocation Annihilation and Recombination in GaN Columns Deposited by Patterned Growth
MRS Proceedings·2004· 1 cited
Material quality improvement for homoepitaxial GaN and AlN layers grown on sapphire‐based templates
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2003· 3 cited
page 1 of 2Next →

Frequent Co-authors

Charles R. Eddy(10), O. Kryliouk(8), R. T. Holm(7), V. Soukhoveev(7), V. Dmitriev(7), D. Tsvetkov(6), A. Usikov(6), B. Luo(5), F. Ren(5), S. J. Pearton(5), Joshua D. Caldwell(4), D. Kurt Gaskill(4), Tim Anderson(4), R. L. Henry(4), Kwang Hyeon Baik(4), А. И. Печников(4), Yoosuf N. Picard(3), M. E. Twigg(3), Nabil Bassim(3), M. E. Twigg(3)