Yorinobu Kunimune

Ehime University — Japan

Engineering · Physical Sciences

6h-index126citations29works0.02yr avg
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Research Topics

Semiconductor materials and devices(12), Integrated Circuits and Semiconductor Failure Analysis(9), Advanced Materials Characterization Techniques(7), Semiconductor materials and interfaces(6), Electron and X-Ray Spectroscopy Techniques(5)

Publications29 total

Separation of nickel and cobalt using a chelating resin by the mixing of citric acid and ammonium chloride as the complexing agent in solution for resource recovery from used lithium batteries
Separation and Purification Technology·2025Open Access
The effect of microstructures on the electrical properties of Cr–Si–C thin film resistors
Japanese Journal of Applied Physics·2022· 4 citedOpen Access
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique
IEICE Technical Report; IEICE Tech. Rep.·2019
Highly Reliable Ferroelectric Hf<inf>0.5</inf>Zr<inf>0.5</inf>O<inf>2</inf> Film with Al Nanoclusters Embedded by Novel Sub-Monolayer Doping Technique
2018· 7 cited
Effect of carbon on boron diffusion and clustering in silicon: Temperature dependence study
Journal of Applied Physics·2018· 5 cited
Blocking of deuterium diffusion in poly-Si/Al2O3/HfxSi1−xO2/SiO2 high-<i>k</i> stacks as evidenced by atom probe tomography
Applied Physics Letters·2018· 1 cited
Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography
The Japan Society of Applied Physics·2017
Atom Probe Tomographic Study on Implanted Deuterium in Al 2 O 3 /Hf x Si 1-x O 2 /SiO 2 Stacks
The Japan Society of Applied Physics·2017
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
AIP Advances·2016· 16 citedOpen Access
Hydrogen Distribution Analysis in Al 2 O 3 Film -Dependence of Annealing Temperature-
The Japan Society of Applied Physics·2016
Phosphorus and boron diffusion paths in polycrystalline silicon gate of a trench-type three-dimensional metal-oxide-semiconductor field effect transistor investigated by atom probe tomography
Applied Physics Letters·2015· 25 cited
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO<sub>2</sub>/SiN/SiO<sub>2</sub>films with thermal treatment
Japanese Journal of Applied Physics·2014· 2 cited
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO
Japanese Journal of Applied Physics·2014
Dopant Drive-in Path Analysis in Poly-silicon Filled in Trench type 3D-MOSFET using Atom Probe Tomography
2014
Formation of high resistivity phases of nickel silicide at small area
Microelectronics Reliability·2013· 5 cited
Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method
Journal of Applied Physics·2012· 1 cited
Nano-scale Boron Mapping in Silicon Devices Using C&lt;sub&gt;s&lt;/sub&gt;-corrected STEM-EELS
2011
Atomic Scale Characterization of Crystal Defect in Epitaxial Silicon by Aberration-corrected STEM and Low Energy FIB Sample Preparation
2011
Newly Found Anomalous Gate Leakage Current (AGLC) for 65 nm Node and Beyond, and Its Countermeasure Using Nitrogen Implanted Poly-Si
2006· 2 cited
Stress relaxation in dual-damascene Cu interconnects to suppress stress-induced voiding
2004· 15 cited
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Frequent Co-authors

Yasuo Shimizu(8), Koji Inoue(8), Masao Inoue(8), Takashi Ide(8), Yasuyoshi Nagai(6), Fumiko Yano(6), Yuan Tu(6), Bin Han(5), Akio Nishida(5), T. Katayama(5), Yasuhiro Shimada(4), A. Mineji(4), Hisashi Takamizawa(3), S. Koyama(3), Yusuke Sakurai(3), Masashi Inoue(3), N. Nishio(3), M. Makabe(2), Tetsushi Matsuda(2), Michiya Takimoto(2)