Takashi Ide

Renesas Electronics (Japan) — Japan

Materials Science · Physical Sciences

10h-index367citations75works0.02yr avg
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Research Topics

Diamond and Carbon-based Materials Research(10), Semiconductor materials and devices(9), Force Microscopy Techniques and Applications(8), Ion-surface interactions and analysis(8), Advanced Surface Polishing Techniques(6)

Publications73 total

CNN-Based Layout Segment Classification for Analysis of Layout-Induced Failures
IEEE Transactions on Semiconductor Manufacturing·2020· 6 cited
Highly Reliable Ferroelectric Hf0.5Zr0.5O2 Film with Al Nanoclusters Embedded by Sub-Monolayer Doping Technique
IEICE Technical Report; IEICE Tech. Rep.·2019
Initiator‐free photopolymerization of common acrylate monomers with 254 nm light
Polymer International·2018· 10 citedOpen Access
Effect of carbon on boron clustering and diffusion in silicon studied by atom probe tomography
The Japan Society of Applied Physics·2017
Quantitative analysis of hydrogen in SiO2/SiN/SiO2 stacks using atom probe tomography
AIP Advances·2016· 16 citedOpen Access
Hydrogen Distribution Analysis in Al 2 O 3 Film -Dependence of Annealing Temperature-
The Japan Society of Applied Physics·2016
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO<sub>2</sub>/SiN/SiO<sub>2</sub>films with thermal treatment
Japanese Journal of Applied Physics·2014· 2 cited
High resolution secondary ion mass spectrometry analysis of hydrogen behavior in SiO
Japanese Journal of Applied Physics·2014
CCDC 827536: Experimental Crystal Structure Determination
The Cambridge Structural Database·2013Open Access
Study of strain fields caused by crystallization of boron doped amorphous silicon using scanning transmission electron microscopy convergent beam electron diffraction method
Journal of Applied Physics·2012· 1 cited
Photophysical properties and photostability of novel unsymmetric polycyclicphenazine-type D-π-A fluorescent dyes and the dye-doped films
Journal of Photochemistry and Photobiology A Chemistry·2011· 5 cited
Photophysical properties and photostability of novel symmetric polycyclicphenazine-type fluorescent dyes and the dye-doped films
Dyes and Pigments·2011· 13 cited
Correlation of electrical properties with interface structures of CVD oxide-based oxynitride tunnel dielectrics
2009· 1 cited
Indications for an ideal interface structure of oxynitride tunnel dielectrics
IEEE International Reliability Physics Symposium proceedings·2009· 4 cited
Deconvolution analysis of dopant depth profile of Si at AlGaAs/GaAs interface using Al composition profile as reference
Applied Surface Science·2004· 5 cited
Interface Structure of Tunnel Oxynitride for Flash Memory Studied by Hard X-ray Photoelectron Spectroscopy
2004· 1 cited
Solid Phase Ring-opening Polymerization of Macrocyclic S-Aryl Thioesters Containing Terephthaloyl Structure
High Performance Polymers·2003· 5 cited
High-Rate Synthesis of Diamond by Plasma CVD under Higher Pressure than Atmospheric Pressure
Journal of the Japan Society for Precision Engineering·2003· 1 citedOpen Access
Study of Boron Penetration through Gate Oxide Layer by SIMS under Optimized Incident Angle of Low-energy Oxygen Primary Ion Beam
Hyomen Kagaku·2003· 1 citedOpen Access
Formation of Diamond-like Carbon Film by Electrostatic Particle-Impact-Deposition : Effect of Magnetic and RF Fields on Film Growth
The Proceedings of Conference of Chugoku-Shikoku Branch·2002Open Access
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Frequent Co-authors

Yuzo Mori(9), Katsuyoshi Endo(8), Yuzo Mori(8), Hidetsugu Yagi(8), Hiromichi Toyota(6), Yorinobu Kunimune(4), Kikuji Hirose(4), Naoya Ikawa(4), K. Shimizu(3), Kazuto Yamauchi(3), Muneharu Komori(3), Kazuya Makiyama(3), Kohei Hara(3), Masuho Haraguchi(3), Hidekazu Goto(3), Kazuto Yamauchi(2), Akira Sakai(2), Yusuke Sakurai(2), Masao Inoue(2), Akio Nishida(2)