M. Baeumler

Fraunhofer Institute for Applied Solid State Physics — Germany

Physics and Astronomy · Physical Sciences

19h-index1.3kcitations81works1.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(32), Semiconductor materials and devices(29), Semiconductor Quantum Structures and Devices(20), Silicon Carbide Semiconductor Technologies(13), Semiconductor materials and interfaces(11)

Publications81 total

Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate
Microelectronics Reliability·2025· 1 citedOpen Access
Photoluminescence Imaging
2024· 1 cited
Influence of growth temperature on the properties of aluminum nitride thin films prepared by magnetron sputter epitaxy
Journal of Applied Physics·2023· 23 citedOpen Access
Polarization induced interface and electron sheet charges of pseudomorphic ScAlN/GaN, GaAlN/GaN, InAlN/GaN, and InAlN/InN heterostructures
Journal of Applied Physics·2021· 81 citedOpen Access
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
2021· 5 cited
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress
2020· 1 cited
Optical constants and band gap of wurtzite Al1−xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x = 0.41
Journal of Applied Physics·2019· 90 citedOpen Access
Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors
2018· 4 cited
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Microelectronics Reliability·2018· 5 cited
Cross-sectional TEM study of degraded high power diode lasers
2017· 2 cited
Investigation of degraded laser diodes by chemical preparation and luminescence microscopy
2017· 6 cited
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications
Microelectronics Reliability·2017· 15 cited
With electroluminescence microcopy towards more reliable AlGaN/GaN transistors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2015· 2 cited
Degradation of 0.25 μm GaN HEMTs under high temperature stress test
Microelectronics Reliability·2015· 13 cited
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices
Microelectronics Reliability·2014· 8 cited
Reliability of GaN HEMTs with a 100 nm gate length under DC-stress tests
2014· 6 cited
Electroluminescence Investigation of the Lateral Field Distribution in AlGaN/GaN HEMTs for Power Applications
Acta Physica Polonica A·2014· 3 citedOpen Access
Densification of Thin Aluminum Oxide Films by Thermal Treatments
Materials Sciences and Applications·2014· 53 citedOpen Access
Characterization of Al2O3/GaAs interfaces and thin films prepared by atomic layer deposition
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena·2013· 7 cited
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors
Semiconductor Science and Technology·2012· 20 cited
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Frequent Co-authors

O. Ambacher(14), R. Quay(14), U. Kaufmann(11), M. Dammann(11), M. Mikulla(9), H. Konstanzer(9), Lutz Kirste(8), S. Müller(8), J. Wagner(7), Patrick Waltereit(7), W. Bronner(6), V. M. Polyakov(6), W. Jantz(6), Andreas Graff(6), Frank Gütle(5), Markus Cäsar(5), Peter Brückner(5), J. Windscheif(4), K. Köhler(4), Jens W. Tomm(4)