M. Dammann

Leibniz University Hannover — Germany

Physics and Astronomy · Physical Sciences

17h-index857citations82works3.12yr avg
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Research Topics

GaN-based semiconductor devices and materials(45), Semiconductor materials and devices(36), Semiconductor Quantum Structures and Devices(22), Silicon Carbide Semiconductor Technologies(21), Radio Frequency Integrated Circuit Design(20)

Publications82 total

Maintenance of Jet Engines: Robust Parameterization and Reconstruction of Compressor and Turbine Blades
Journal of Engineering for Gas Turbines and Power·2025Open Access
P29-02 Comparative assessment of 24 poorly soluble, low toxicity dusts after short-term exposure
Toxicology Letters·2025
Characterisation of beech wood pyrolysis oil: Chemical and physical properties and decomposition kinetics
Fuel·2025· 2 cited
Maintenance of Jet Engines: Robust Parametrisation and Reconstruction of Compressor and Turbine Blades
2025
Reliability and failure analysis of AlGaN/GaN HEMT with NiPtAu and PtAu gate
Microelectronics Reliability·2025· 1 citedOpen Access
Entrained flow gasification: Pilot-scale experimental, balancing and equilibrium data for model validation
Fuel·2024· 15 citedOpen Access
Devolatilisation of beech wood char: Kinetics from thermogravimetric analyses and drop-tube reactor experiments
Fuel·2024· 3 citedOpen Access
Thermal radiation at high-temperature and high-pressure conditions: Validation of HITEMP-2010 for carbon dioxide
Journal of Quantitative Spectroscopy and Radiative Transfer·2024· 3 citedOpen Access
Towards Vertical GaN-Power ICs: Co-integration of Lateral HEMTs and Vertical Power CAVETs
2024· 4 cited
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations
2023· 1 citedOpen Access
Advances in GaN Devices and Circuits at Higher mm-Wave Frequencies
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 23 citedOpen Access
Thermal radiation at high-temperature and high-pressure conditions: Comparison of models for design and scale-up of entrained flow gasification processes
Thermal Science and Engineering Progress·2023· 7 citedOpen Access
Entrained flow gasification: Impact of fuel spray distribution on reaction zone structure
Fuel·2022· 10 citedOpen Access
Entrained Flow Gasification: Impact of Fuel Spray Distribution on Reaction Zone Structure
SSRN Electronic Journal·2022· 2 citedOpen Access
Reliability and Failure Analysis of 100 nm AlGaN/GaN HEMTs under DC and RF Stress
2021· 5 cited
Entrained flow gasification: Mathematical modelling based on RANS for design and scale-up
Repository KITopen (Karlsruhe Institute of Technology)·2021Open Access
Deep Submicron III-N HEMTs – Technological Development and Reliability
2019· 6 cited
High-Power-Density AlGaN/GaN Technology for 100-V Operation at L-Band Frequencies
2019· 8 cited
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology
Microelectronics Reliability·2018· 5 cited
Entrained flow gasification. Part 2: Mathematical modeling of the gasifier using RANS method
Fuel·2018· 24 cited
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Frequent Co-authors

R. Quay(31), M. Mikulla(27), Patrick Waltereit(20), O. Ambacher(19), S. Müller(16), W. Bronner(15), M. Baeumler(9), G. Weimann(9), Rudolf Kiefer(9), Markus Cäsar(9), Peter Brückner(9), H. Konstanzer(9), F. van Raay(8), M. Schlechtweg(7), V. M. Polyakov(7), T. Rödle(7), K. Riepe(7), K. Köhler(6), Arnulf Leuther(6), W. Jantz(6)