Chris G. Van de Walle

University of California, Santa Barbara — United States

Physics and Astronomy · Physical Sciences

122h-index71.5kcitations771works3.82yr avg
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Research Topics

GaN-based semiconductor devices and materials(241), Semiconductor materials and devices(224), ZnO doping and properties(180), Ga2O3 and related materials(174), Electronic and Structural Properties of Oxides(142)

Publications770 total

Carbon-nitrogen complex as an alternative to the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>T</mml:mi> </mml:math> center in Si
Physical review. B./Physical review. B·2026· 1 citedOpen Access
Resonant states and nuclear dynamics in solid-state systems: The case of silicon-hydrogen bond dissociation
Physical review. B./Physical review. B·2026Open Access
Impact of absorption due to zero-field splitting on loss in dielectrics: A case study in sapphire
Physical review. B./Physical review. B·2026
Charge state equilibration of nitrogen-vacancy center ensembles in diamond: The role of electron tunneling
arXiv (Cornell University)·2025Open Access
Electronic and optical properties of transition metal impurities in GaN and AlN
Physical review. B./Physical review. B·2025Open Access
Formation of the <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msubsup><mml:mi>E</mml:mi><mml:mn>4</mml:mn><mml:mo>*</mml:mo></mml:msubsup></mml:math> level in implanted <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>β</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Ga</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>
Physical Review Materials·2025Open Access
Optical properties of vacancies in aluminum oxide <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mo>(</mml:mo><mml:mi>α</mml:mi><mml:mtext>−</mml:mtext><mml:msub><mml:mi>Al</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub><mml:mo>)</mml:mo></mml:mrow></mml:math> from first principles
Physical Review Materials·2025Open Access
Design of high-mobility <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>p</mml:mi></mml:math>-type GaN via the piezomobility tensor
Physical Review Materials·2025· 1 citedOpen Access
Design of high-mobility p-type GaN via the piezomobility tensor
arXiv (Cornell University)·2025Open Access
Heterostructure engineering for wurtzite LaN
The Journal of Chemical Physics·2025· 1 citedOpen Access
Carbon in GaN as a nonradiative recombination center
Applied Physics Letters·2025· 3 citedOpen Access
Distinguishing Thermal Fluctuations from Polaron Formation in Halide Perovskites
Physical Review Letters·2025· 4 citedOpen Access
Impact of Absorption due to Zero-Field Splitting on Loss in Dielectrics
arXiv (Cornell University)·2025Open Access
Role of lattice vibrations in gallium vacancy formation in monoclinic Ga2O3
2025
Investigations of compensating deep acceptor defects in β-Ga2O3 by thermal and optical defect spectroscopy methods
2025
Characterization of chromium impurities in <i>β</i>-Ga2O3
Journal of Applied Physics·2025· 6 citedOpen Access
Trade‐Off Between Toxicity and Efficiency in Tin‐ versus Lead‐Based Halide Perovskites
Angewandte Chemie·2025
Trade‐Off Between Toxicity and Efficiency in Tin‐ versus Lead‐Based Halide Perovskites
Angewandte Chemie International Edition·2025· 8 citedOpen Access
Carbon in GaN as a nonradiative recombination center
arXiv (Cornell University)·2025Open Access
Modeling carrier trapping at semiconductor/dielectric interfaces based on first-principles calculations of nonradiative capture
Journal of Applied Physics·2025· 1 citedOpen Access
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Frequent Co-authors

Anderson Janotti(17), Jörg Neugebauer(9), Joel B. Varley(6), Audrius Alkauskas(4), Christoph Freysoldt(3), Georg Kresse(3), J. R. Weber(3), John L. Lyons(3), Patrick Rinke(3), Hartwin Peelaers(3), Richard M. Martin(2), Bob B. Buckley(2), D. D. Awschalom(2), Catherine Stampfl(2), Cesare Franchini(2), S. T. Pantelides(2), Kris T. Delaney(2), Qimin Yan(2), Poul Georg Moses(2), David B. Laks(2)