J. R. Weber

Intel (United States) — United States

Engineering · Physical Sciences

17h-index3.3kcitations47works11.02yr avg
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Research Topics

Semiconductor materials and devices(22), ZnO doping and properties(9), Electronic and Structural Properties of Oxides(8), Advancements in Semiconductor Devices and Circuit Design(5), Semiconductor materials and interfaces(5)

Publications47 total

Dangling bonds, the charge neutrality level, and band alignment in semiconductors
Journal of Applied Physics·2024· 11 citedOpen Access
2D Materials in the BEOL
2023· 6 cited
Reliability Modeling of Middle-Of-Line Interconnect Dielectrics in Advanced process nodes
2023· 2 cited
Characterization and Closed-Form Modeling of Edge/Top/Hybrid Metal-2D Semiconductor Contacts
2022 International Electron Devices Meeting (IEDM)·2022· 10 cited
Intrinsic Reliability of BEOL interlayer dielectric
2021· 1 cited
Intrinsic Reliability Study in Low-k Dielectrics with Co Metallurgy in 10nm Process
2020· 2 cited
Reliability Characteristics of a High Density Metal- Insulator-Metal Capacitor on Intel’s 10+ Process
2020· 16 cited
State-of-the-art TCAD: 25 years ago and today
2019· 8 cited
Electronic structure calculations for industrial technology development
Bulletin of the American Physical Society·2017
Device modeling challenges in the realm of overlapping physical scales: From atomistic to continuum, from coherent to diffusive transport
2016· 1 cited
Erratum: “Oxygen vacancies and donor impurities in <i>β</i>-Ga2O3” [Appl. Phys. Lett. <b>97</b>, 142106 (2010)]
Applied Physics Letters·2016· 15 citedOpen Access
Defects in Germanium
2015· 9 cited
Quantum computing with defects
MRS Bulletin·2013· 59 citedOpen Access
Defects at Ge/oxide and III–V/oxide interfaces
Microelectronic Engineering·2013· 35 cited
Dangling bonds and vacancies in germanium
Physical Review B·2013· 63 cited
CCDC 812152: Experimental Crystal Structure Determination
The Cambridge Structural Database·2013Open Access
Metropolis Prize Talk: Defects in Al$_{2}$O$_{3}$ and their impact on III-V/Al$_{2}$O$_{3}$ MOS-based devices
Bulletin of the American Physical Society·2012
Experimental electronic structure of In<sub>2</sub>O<sub>3</sub>and Ga<sub>2</sub>O<sub>3</sub>
New Journal of Physics·2011· 346 citedOpen Access
Defects in SiC for quantum computing
Journal of Applied Physics·2011· 84 cited
Native defects in Al2O3 and their impact on III-V/Al2O3 metal-oxide-semiconductor-based devices
Journal of Applied Physics·2011· 167 cited
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Frequent Co-authors

Chris G. Van de Walle(20), Anderson Janotti(17), Joel B. Varley(8), Rahim Kasim(4), Che-Yun Lin(3), Christopher J. Perini(3), J. Palmer(3), William F. Koehl(2), Bob B. Buckley(2), D. D. Awschalom(2), C. Janowitz(2), Mansour Mohamed(2), R. Manzke(2), Zbigniew Galazka(2), R. Fornari(2), Luke Gordon(2), Edward G. Janzen(2), Uygar E. Avci(2), J. Hicks(2), Maosheng Miao(2)