Shuhei Nagatsuka

Semiconductor Energy Laboratory (Japan) — Japan

Engineering · Physical Sciences

9h-index343citations22works0.02yr avg
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Research Topics

Semiconductor materials and devices(18), Advanced Memory and Neural Computing(12), Thin-Film Transistor Technologies(11), CCD and CMOS Imaging Sensors(5), Transition Metal Oxide Nanomaterials(3)

Publications22 total

3D-Stacked CAAC-In-Ga-Zn Oxide FETs with Gate Length of 72nm
2019· 59 cited
A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology
2017· 24 cited
(Invited) Embedded Oxide Semiconductor Memories: A Key Enabler for Low-Power ULSI
ECS Transactions·2017· 13 cited
A 16-level-cell memory with c-axis-aligned a–b-plane-anchored crystal In–Ga–Zn oxide FET using threshold voltage cancel write method
Japanese Journal of Applied Physics·2016· 4 cited
A 16-Level-Cell Memory with 0.24mV/°C Temperature Characteristics Comprising Crystalline In-Ga-Zn Oxide FET
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials·2015· 1 cited
A 16-Level-Cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET
2015· 3 cited
A 128kb 4bit/cell Nonvolatile Memory with Crystalline In-Ga-Zn Oxide FET Using Vt Cancel Write Method
IEICE Technical Report; IEICE Tech. Rep.·2015
Fabrication of dynamic oxide semiconductor random access memory with 3.9 fF storage capacitance and greater than 1 h retention by using<i>c</i>-axis aligned crystalline oxide semiconductor transistor with<i>L</i>of 60 nm
Japanese Journal of Applied Physics·2015· 11 cited
16.9 A 128kb 4b/cell nonvolatile memory with crystalline In-Ga-Zn oxide FET using V&lt;inf&gt;t&lt;/inf&gt;, cancel write method
2015· 8 cited
300 μs Short Interval Continuous Capturing Image Sensor with C-axis Aligned Crystalline Oxide Semiconductor FET/p-channel Silicon FET Stacked CMOS Structure
2014· 3 cited
High-speed and Low-leakage Characteristics of 60-nm C-axis Aligned Crystalline Oxide Semiconductor FET with GHz-ordered Cutoff Frequency
2014· 4 cited
DRAM with Storage Capacitance of 3.9 fF using CAAC-OS Transistor with L of 60 nm and having More Than 1-h Retention Characteristics
2014· 4 cited
(Invited) Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor
ECS Transactions·2014· 1 cited
Multilevel Cell Nonvolatile Memory with Field-effect Transistor Using Crystalline Oxide Semiconductor
ECS Meeting Abstracts·2014
Scaling to 50-nm C-axis aligned crystalline In-Ga-Zn oxide FET with surrounded channel structure and its application for less-than-5-nsec writing speed memory
2014· 20 cited
A 3bit/cell nonvolatile memory with crystalline In-Ga-Zn-O TFT
2013· 22 cited
Multi-Level Cell Memory with High-Speed, Low-Voltage Writing and High Endurance Using Crystalline In-Ga-Zn Oxide Thin Film Transistor
2012· 3 cited
C-012 Applicability of a Memory using Crystalline Oxide Semiconductor Transistors and Si Transistors to a Normally off Computer
情報科学技術フォーラム講演論文集·2012
Nonvolatile Memory With Extremely Low-Leakage Indium-Gallium-Zinc-Oxide Thin-Film Transistor
IEEE Journal of Solid-State Circuits·2012· 99 cited
DRAM Using Crystalline Oxide Semiconductor for Access Transistors and Not Requiring Refresh for More Than Ten Days
2012· 37 cited
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Frequent Co-authors

Shunpei Yamazaki(18), Tatsuya Onuki(17), Takahiko Ishizu(14), Kiyoshi Katō(14), Yutaka Shionoiri(13), Jun Koyama(12), Takanori Matsuzaki(11), Tomoaki Atsumi(11), Hiroki Inoue(9), Takashi Okuda(9), Yutaka Okazaki(8), H Miyairi(8), Masayuki Sakakura(7), Atsuo Isobe(6), Yoshinori Ieda(6), Yoshitaka Yamamoto(6), Daisuke Matsubayashi(5), Naoto Yamade(5), Yoshinori Ando(4), Yuto Yakubo(4)