Daisuke Matsubayashi

Imec the Netherlands — Netherlands

Engineering · Physical Sciences

14h-index541citations46works1.62yr avg
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Research Topics

Thin-Film Transistor Technologies(27), Semiconductor materials and devices(22), ZnO doping and properties(12), Advancements in Semiconductor Devices and Circuit Design(10), Advanced Memory and Neural Computing(9)

Publications46 total

Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C
2025
First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors
2025
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Oxide Semiconductors TFTs Integration in CMOS BEOL: Device Considerations for Enabling Novel Applications
2025
Capacitor-Less IGZO Based Gain Cell (2TOC): A Disruptive Technology for High-Density eDRAM and 3D-DRAM
2025
Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells
2025· 1 cited
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
ACS Applied Electronic Materials·2025· 5 cited
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
IEEE Electron Device Letters·2025· 4 cited
The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
IEEE Electron Device Letters·2025· 1 citedOpen Access
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
arXiv (Cornell University)·2024Open Access
Unraveling BTI in IGZO Devices: Impact of Device Architecture, Channel Film Deposition Method and Stoichiometry/Phase, and Device Operating Conditions
2024· 8 cited
In silico screening for As/Se-free ovonic threshold switching materials
npj Computational Materials·2023· 14 citedOpen Access
Understanding the Cycling-Dependent Threshold Voltage Instability in OTS Devices
2022 International Electron Devices Meeting (IEDM)·2022· 8 citedOpen Access
Memory LSI using crystalline oxide semiconductor FET
IEICE Technical Report; IEICE Tech. Rep.·2018
A 20ns-write 45ns-read and 10<sup>14</sup>-cycle endurance memory module composed of 60nm crystalline oxide semiconductor transistors
2018· 11 cited
Performance boost of crystalline In-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application
2017· 22 cited
A 140 MHz 1 Mbit 2T1C gain-cell memory with 60-nm indium-gallium-zinc oxide transistor embedded into 65-nm CMOS logic process technology
2017· 24 cited
Performance boost of crystalline in-Ga-Zn-O material and transistor with extremely low leakage for IoT normally-off CPU application
2017· 20 cited
(Invited) Embedded Oxide Semiconductor Memories: A Key Enabler for Low-Power ULSI
ECS Transactions·2017· 13 cited
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Frequent Co-authors

Shunpei Yamazaki(25), Nouredine Rassoul(11), Subhali Subhechha(11), Yutaka Okazaki(10), Shinpei Matsuda(10), Gouri Sankar Kar(10), Attilio Belmonte(10), Kiyoshi Katō(9), Masashi Tsubuku(7), Yuto Yakubo(6), Hideomi Suzawa(6), Adrian Chasin(6), Harold Dekkers(6), Shuhei Nagatsuka(5), Takahiko Ishizu(5), Y. Yamamoto(5), Yoshiyuki Kobayashi(5), Takashi Hamada(5), Anastasiia Kruv(5), Alexandru Pavel(5)