Subhali Subhechha

Imec the Netherlands — Netherlands

Engineering · Physical Sciences

13h-index741citations60works1.02yr avg
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Research Topics

Semiconductor materials and devices(30), Thin-Film Transistor Technologies(29), Advanced Memory and Neural Computing(22), Ferroelectric and Negative Capacitance Devices(15), Advancements in Semiconductor Devices and Circuit Design(8)

Publications60 total

Improving IGZO transistor PBTI reliability with hydrogen anneal achieving overdrive voltage of 1.2V for a lifetime of 5 years at 95°C
2025
SOT-MRAM Bitcell Scaling With BEOL Read Selectors: A DTCO Study
IEEE Transactions on Electron Devices·2025Open Access
Device Process and Architecture Aware Physical TCAD Model for Ultra-Thin Film a-IGZO Transistors
2025
IGZO Based eDRAM: Bitcell and Array Optimization Enabling Denser Last Level Caches
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
IGZO Based eDRAM: Bitcell and Array Optimization Enabling Denser Last Level Caches
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
IGZO Based eDRAM: Bitcell and Array Optimization Enabling Denser Last Level Caches
2025
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Oxide Semiconductors TFTs Integration in CMOS BEOL: Device Considerations for Enabling Novel Applications
2025
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Applied Physics Letters·2025Open Access
Process Insights into 3D-DRAM with Vertical Bit Line and Scalable GAA Transistor
2025· 1 citedOpen Access
Capacitor-Less IGZO Based Gain Cell (2TOC): A Disruptive Technology for High-Density eDRAM and 3D-DRAM
2025
3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications
2025
Accurate off-current evaluation by parasitic capacitance extraction in capacitor-less DRAM cells
2025· 1 cited
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
ACS Applied Electronic Materials·2025· 5 cited
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
IEEE Electron Device Letters·2025· 4 cited
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Frequent Co-authors

Gouri Sankar Kar(36), Nouredine Rassoul(30), Attilio Belmonte(25), Romain Delhougne(17), Adrian Chasin(15), H.F.W. Dekkers(13), Michiel J. van Setten(12), Harinarayanan Puliyalil(11), Harold Dekkers(10), Jan Van Houdt(10), A. Belmonte(9), Daisuke Matsubayashi(8), Sergiu Clima(7), Shreya Kundu(7), Murat Pak(6), D. Tsvetanova(6), Hubert Hody(6), Hongwei Tang(6), Ludovic Goux(6), K. De Meyer(6)