H.F.W. Dekkers

Imec the Netherlands — Netherlands

Engineering · Physical Sciences

16h-index817citations46works1.82yr avg
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Research Topics

Thin-Film Transistor Technologies(26), Semiconductor materials and devices(25), Silicon and Solar Cell Technologies(10), Silicon Nanostructures and Photoluminescence(9), Metal and Thin Film Mechanics(6)

Publications46 total

Hard Mask Strategies in Nanoscale Patterning of Mg-Based Oxide Semiconductors: Implications for Advanced Device Architectures
ACS Applied Nano Materials·2025
Deposition of spinel IGZO thin films with increased indium contents on textured GZO templates
Journal of Applied Physics·2025Open Access
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
Subthreshold swing behavior in amorphous indium-gallium-zinc-oxide transistors from room to cryogenic temperatures
Applied Physics Letters·2025Open Access
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
ACS Applied Electronic Materials·2025· 5 cited
Spinel IGZO deposition on optimized GZO templates
Journal of Materials Science Materials in Electronics·2025
Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
2024· 3 cited
Unraveling BTI in IGZO Devices: Impact of Device Architecture, Channel Film Deposition Method and Stoichiometry/Phase, and Device Operating Conditions
2024· 8 cited
The Impact of IGZO Channel Composition on DRAM Transistor Performance
IEEE Transactions on Electron Devices·2023· 12 citedOpen Access
Lowest I<sub>OFF</sub> &lt; 3×10<sup>−21</sup> A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT
2023· 32 cited
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
2022· 2 citedOpen Access
A Correlative Analysis Flow for Electrical and Structural Characterization of IGZO Transistors
2022
Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for V<sub>t</sub> &gt; 0 V and I<sub>on</sub> &gt; 30 µA/µm
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 45 cited
Deposition, Characterization, and Performance of Spinel InGaZnO<sub>4</sub>
ACS Applied Electronic Materials·2022· 22 cited
Complex amorphous oxides: property prediction from high throughput DFT and AI for new material search
Materials Advances·2022· 13 citedOpen Access
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 65 cited
Oxygen Defect Stability in Amorphous, <i>C</i>-Axis Aligned, and Spinel IGZO
ACS Applied Electronic Materials·2021· 25 cited
Systematic Study on the Amorphous, <i>C</i>-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors
ACS Applied Electronic Materials·2021· 30 cited
Mechanisms of TiN Effective Workfunction Tuning at Interfaces with HfO<sub>2</sub> and SiO<sub>2</sub>
The Journal of Physical Chemistry C·2020· 29 citedOpen Access
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Frequent Co-authors

Subhali Subhechha(14), Gouri Sankar Kar(12), Attilio Belmonte(10), Michiel J. van Setten(10), Nouredine Rassoul(9), Romain Delhougne(9), Adrian Chasin(7), G. Beaucarne(7), A. Belmonte(5), Sven Van Elshocht(4), Shreya Kundu(4), Geoffrey Pourtois(4), G. Agostinelli(4), Anastasiia Kruv(4), Lucas Petersen Barbosa Lima(3), Wenzhong Shen(3), Harinarayanan Puliyalil(3), D. Tsvetanova(3), Hongwei Tang(3), Dennis Lin(3)