Adrian Chasin

Imec the Netherlands — Netherlands

Engineering · Physical Sciences

26h-index2.4kcitations144works2.72yr avg
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Research Topics

Semiconductor materials and devices(97), Advancements in Semiconductor Devices and Circuit Design(81), Thin-Film Transistor Technologies(45), Integrated Circuits and Semiconductor Failure Analysis(30), Ferroelectric and Negative Capacitance Devices(24)

Publications144 total

Incorporation of Temperature Impact on Hot-Carrier Degradation into Compact Physics Model
Micromachines·2025Open Access
Exploration and Insights into Vertical Nanowire/sheet FETs for Ultimate Scaled Circuits/Systems
2025
Oxide Semiconductors TFTs Integration in CMOS BEOL: Device Considerations for Enabling Novel Applications
2025
In-Poor IGZO: Superior Resilience to Hydrogen in Forming Gas Anneal and PBTI
ACS Applied Electronic Materials·2025· 5 cited
Pathways for Retention Boost in Atomic Layer Etched IGZO-Based Capacitorless DRAM
IEEE Electron Device Letters·2025· 4 cited
Dielectric Breakdown Analysis on Bottom and Top-Gated IGZO-TFT
2025
Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications
2025· 1 cited
The Impact of Process Steps on Nearly Ideal Subthreshold Slope in 300-mm Compatible InGaZnO TFTs
IEEE Electron Device Letters·2025· 1 citedOpen Access
In-poor IGZO: superior resilience to hydrogen in forming gas anneal and PBTI
arXiv (Cornell University)·2024Open Access
Unraveling BTI in IGZO Devices: Impact of Device Architecture, Channel Film Deposition Method and Stoichiometry/Phase, and Device Operating Conditions
2024· 8 cited
The Effect of Resonant Tunneling on Random Telegraph Noise in the Cryogenic Regime
2024
Cryogenic Temperature Effects on 16nm FinFet Performance and Mismatch
2024· 3 cited
Charge Trapping and Emission during Bias Temperature Stressing of Schottky Gate GaN-on-Silicon HEMT Structures Targeting RF/mm Wave Power Amplifiers
Micromachines·2024· 3 citedOpen Access
A Physical TCAD Mobility Model of Amorphous In-Ga-Zn-O (a-IGZO) Devices with Spatially Varying Mobility Edges, Band-Tails, and Enhanced Low-Temperature Convergence
Micromachines·2024· 4 citedOpen Access
Gate oxide reliability: upcoming trends, challenges, and opportunities
2024· 4 cited
Fundamental understanding of NBTI degradation mechanism in IGZO channel devices
2024· 12 cited
DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers
2024· 2 cited
Characterization of trap density in Indium-Gallium-Zinc-Oxide thin films by admittance measurements in multi-finger MOS structures
Solid-State Electronics·2024· 1 cited
Total-Ionizing-Dose Effects in IGZO Thin-Film Transistors With SiO₂ Oxygen-Penetration Layers
IEEE Transactions on Nuclear Science·2023· 3 cited
Compact Physics Hot-Carrier Degradation Model Valid over a Wide Bias Range
Micromachines·2023· 3 citedOpen Access
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Frequent Co-authors

B. Kaczer(18), Paul Heremans(16), Naoto Horiguchi(14), J. Franco(13), Kris Myny(12), Manoj Nag(12), Jan Genoe(12), E. Bury(12), Soeren Steudel(11), D. Linten(11), Hans Mertens(10), R. Ritzenthaler(10), G. Groeseneken(9), Romain Delhougne(8), Gouri Sankar Kar(8), Ajay Bhoolokam(8), Harold Dekkers(7), Nouredine Rassoul(7), Subhali Subhechha(7), Michiel J. van Setten(7)