Manoj Nag

Engineering · Physical Sciences

22h-index1.2kcitations76works1.02yr avg
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Research Topics

Thin-Film Transistor Technologies(63), Silicon Nanostructures and Photoluminescence(15), Semiconductor materials and devices(13), Silicon and Solar Cell Technologies(13), ZnO doping and properties(8)

Publications76 total

A large-area a-IGZO 256x256 imager using a current-mode transimpedance readout for mammography applications
IISS online library·2024· 1 citedOpen Access
Scaling study of contact operation at constant current in self-aligned top-gated oxide semiconductor field-effect transistors
Solid-State Electronics·2022
Scaling Study of Contact Operation at Constant Current in Oxide Semiconductor Field-Effect Transistors
SSRN Electronic Journal·2022Open Access
45.3: <i>Invited Paper:</i> Going Towards High‐Resolution, Uniform AMOLED Displays with a High Brightness Range
SID Symposium Digest of Technical Papers·2021Open Access
An Analytical Method for Parameter Extraction in Oxide Semiconductor Field-Effect Transistors
IEEE Transactions on Electron Devices·2021· 2 cited
Systematic Study on the Amorphous, <i>C</i>-Axis-Aligned Crystalline, and Protocrystalline Phases in In–Ga–Zn Oxide Thin-Film Transistors
ACS Applied Electronic Materials·2021· 30 cited
(Invited) Sub-40mV Sigma V<sub>TH</sub> Igzo nFETs in 300mm Fab
ECS Meeting Abstracts·2020
(Invited) Sub-40mV Sigma V<sub>TH</sub> Igzo nFETs in 300mm Fab
ECS Transactions·2020· 7 citedOpen Access
Sub-µm a-IGZO, Fully integrated, Process improved, Vertical diode for Crosspoint arrays
2020· 7 cited
Electrostatic discharge robustness of amorphous indium-gallium-zinc-oxide thin-film transistors
Microelectronics Reliability·2020· 7 citedOpen Access
Origin of High Current and Illumination Stress Instability in Self-Aligned a-InGaZnO Thin Film Transistors With Al<sub>2</sub>O<sub>3</sub> as High-κ Gate Dielectric
IEEE Electron Device Letters·2020· 12 cited
IGZO Integration Scheme For Enabling IGZO nFETs
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials·2019· 1 cited
P‐12: High Performance Dual‐gate Dual‐layer Amorphous Oxide Semiconductors TFTs on PI Foil for Display Application
SID Symposium Digest of Technical Papers·2019· 9 citedOpen Access
9‐1: <i>Invited Paper:</i> Metal‐oxide readout electronics based on Indium‐Gallium‐Zinc‐Oxide and Indium‐Tin‐Zinc‐Oxide for in‐panel fingerprint detection application
SID Symposium Digest of Technical Papers·2019· 13 citedOpen Access
2-D Smart Surface Object Localization by Flexible 160-nW Monolithic Capacitively Coupled 12-b Identification Tags Based on Metal–Oxide TFTs
IEEE Transactions on Electron Devices·2018· 11 citedOpen Access
1TFT-1RRAM Cell on Polymeric Substrate as Non-Volatile Memory Element Enabling Future Flexible Electronic Platforms
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018Open Access
Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate
2018· 4 citedOpen Access
Effect of High Oxygen Partial Pressure on Carrier Transport Mechanism in a-InGaZnO TFTs
IEEE Transactions on Electron Devices·2018· 12 citedOpen Access
P‐127: Dual‐Gate Self‐Aligned IGZO TFTs Monolithically Integrated with High‐Temperature Bottom Moisture Barrier for Flexible AMOLED
SID Symposium Digest of Technical Papers·2018· 28 citedOpen Access
Self-Aligned Amorphous Indium-Tin-Zinc-Oxide Thin Film Transistors on Polyimide Foil
ECS Journal of Solid State Science and Technology·2018· 12 cited
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Frequent Co-authors

Soeren Steudel(40), Paul Heremans(39), Jan Genoe(37), Kris Myny(30), Ajay Bhoolokam(21), Adrian Chasin(17), Sarah Schols(15), G. Groeseneken(15), Steve Smout(14), Gerwin H. Gelinck(13), Marc Ameys(13), Joris Maas(9), Maarten Rockelé(9), Ashutosh Tripathi(8), Abhishek Kumar(8), Myriam Willegems(8), Georges Gielen(7), Peter Vicca(7), Tung Huei Ke(7), Brian Cobb(7)