Ajay Bhoolokam

Imec the Netherlands — Netherlands

Engineering · Physical Sciences

17h-index807citations37works0.02yr avg
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Research Topics

Thin-Film Transistor Technologies(35), Silicon and Solar Cell Technologies(14), Silicon Nanostructures and Photoluminescence(12), Semiconductor materials and devices(7), ZnO doping and properties(6)

Publications37 total

Integrated Tin Monoxide P-Channel Thin-Film Transistors for Digital Circuit Applications
IEEE Transactions on Electron Devices·2017· 12 citedOpen Access
Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects (Phys. Status Solidi A 6∕2017)
physica status solidi (a)·2017· 4 citedOpen Access
76‐1: <i>Invited Paper</i> : Optimization of Applied Materials PiVot <sup>TM</sup> Array Coater for Metal Oxide Semiconductor Layers
SID Symposium Digest of Technical Papers·2017· 1 cited
Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
physica status solidi (a)·2017· 116 cited
Interplay between hopping and band transport in high-mobility disordered semiconductors at large carrier concentrations: The case of the amorphous oxide InGaZnO
Physical review. B./Physical review. B·2016· 54 citedOpen Access
Characterization of Amorphous Indium Gallium Zinc Oxide Thin Film Transistors
2016· 1 cited
Impact of source/drain contacts formation of self-aligned amorphous-IGZO TFTs on their negative-bias-illumination-stress stabilities (vol 23, pg 397, 2015)
Lirias (KU Leuven)·2016Open Access
Dual-Gate Self-Aligned a-IGZO TFTs using 5-Mask Steps
Lirias (KU Leuven)·2015· 3 cited
Conduction mechanism in amorphous InGaZnO thin film transistors
Japanese Journal of Applied Physics·2015· 19 cited
Paper No S12.5: Self‐Aligned a‐IGZO TFTs: Impact of S/D Contacts Formation on Their Negative‐Bias‐Illumination‐Stress (NBIS) Instability
SID Symposium Digest of Technical Papers·2015
Impact of source/drain contacts formation of self‐aligned amorphous‐IGZO TFTs on their negative‐bias‐illumination‐stress stabilities
Journal of the Society for Information Display·2015· 4 cited
P‐6: Impact of Buffer Layers on the Self‐Aligned Top‐Gate a‐IGZO TFT Characteristics
SID Symposium Digest of Technical Papers·2015· 6 cited
29.4: Flexible AMOLED Display with Integrated Gate Driver Operating at Operation Speed Compatible with 4k2k
SID Symposium Digest of Technical Papers·2015· 14 cited
Low-temperature formation of source–drain contacts in self-aligned amorphous oxide thin-film transistors
Journal of Information Display·2015· 28 citedOpen Access
Self-aligned amorphous-IGZO TFTs: Impact of source-drain contacts formation on their negative-bias-illumination-stress (NBIS) instability
2015
Impact of the Low Temperature Gate Dielectrics on Device Performance and Bias-Stress Stabilities of a-IGZO Thin-Film Transistors
ECS Journal of Solid State Science and Technology·2015· 18 cited
Medium Frequency Physical Vapor Deposited Al<sub>2</sub>O<sub>3</sub>and SiO<sub>2</sub>as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors
ECS Journal of Solid State Science and Technology·2015· 11 citedOpen Access
Analysis of frequency dispersion in amorphous In–Ga–Zn–O thin-film transistors
Journal of Information Display·2014· 13 citedOpen Access
A thin-film microprocessor with inkjet print-programmable memory
Scientific Reports·2014· 78 citedOpen Access
Back-channel-etch amorphous indium–gallium–zinc oxide thin-film transistors: The impact of source/drain metal etch and final passivation
Japanese Journal of Applied Physics·2014· 29 cited
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Frequent Co-authors

Paul Heremans(35), Soeren Steudel(29), Jan Genoe(28), Manoj Nag(28), G. Groeseneken(21), Kris Myny(18), Steve Smout(16), Adrian Chasin(15), Brian Cobb(13), Abhishek Kumar(12), Sarah Schols(10), Maarten Rockelé(9), Gerwin Gelinck(8), Peter Vicca(7), Marc Ameys(7), Robert Müller(7), Gerwin H. Gelinck(6), Myriam Willegems(6), Tung Huei Ke(5), Koji Obata(5)