R. Ritzenthaler

IMEC — Belgium

Engineering · Physical Sciences

24h-index2.4kcitations186works1.42yr avg
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Research Topics

Semiconductor materials and devices(173), Advancements in Semiconductor Devices and Circuit Design(163), Integrated Circuits and Semiconductor Failure Analysis(54), Ferroelectric and Negative Capacitance Devices(39), Silicon Carbide Semiconductor Technologies(24)

Publications186 total

Application of forksheet transistor in operational transconductance amplifier
Solid-State Electronics·2026
First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors
Zenodo (CERN European Organization for Nuclear Research)·2025Open Access
First Systematic Characterization of Floating Body Effects in GAA Nanosheet 3D DRAM Access Transistors
2025
Process Insights into 3D-DRAM with Vertical Bit Line and Scalable GAA Transistor
2025· 1 citedOpen Access
Analog behavior of forksheet FET at high temperatures
Solid-State Electronics·2025· 3 cited
Nanosheet Transistors Produced in 300 mm Fabrication Platform for Quantum Computing
IEEE Electron Device Letters·2025· 3 cited
Nb Contacts for Thermally-Stable High-Performance Logic and Memory Peripheral Transistor
2024· 2 cited
DRAM-Peri FinFET - A Thermally-Stable High-Performance Advanced CMOS RMG Platform with Mo-Based pWFM for sub-10nm DRAM
2024· 1 cited
Temperature Dependence of Quasi–Ballistic Transport in n–Type and p–Type Nanosheets
2024
CMOS Scaling by Nanosheet Device Architectures and Backside Engineering
2024· 8 cited
Characterization of DC performance and low-frequency noise of an array of nMOS Forksheets from 300 K to 4 K
Solid-State Electronics·2024· 1 citedOpen Access
Compact thermally stable high voltage FinFET with 40 nm tox and lateral break-down >35 V for 3D NAND flash periphery application
Japanese Journal of Applied Physics·2024· 1 citedOpen Access
Analog Behavior of Forksheet Fet at High Temperatures
SSRN Electronic Journal·2024Open Access
Dual Operation of Gate-All-Around Silicon Nanowires at Cryogenic Temperatures: FET and Quantum Dot
arXiv (Cornell University)·2023· 3 citedOpen Access
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions
IEEE Transactions on Electron Devices·2023· 4 cited
Compact Thermally Stable High Voltage FinFET with 40nm Tox and Lateral Break-Down>35V for 3D NAND Flash Periphery Application
2023
Impact of Nitridation on Bias Temperature Instability and Hard Breakdown Characteristics of SiON MOSFETs
Micromachines·2023· 6 citedOpen Access
Novel Low Thermal Budget CMOS RMG: Performance and Reliability Benchmark Against Conventional High Thermal Budget Gate Stack Solutions
2023· 3 cited
Reliability challenges in Forksheet Devices: (Invited Paper)
2023· 1 cited
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Frequent Co-authors

Naoto Horiguchi(30), Hans Mertens(17), Jérôme Mitard(15), T. Schram(14), D. Mocuta(13), Andriy Hikavyy(12), G. Groeseneken(12), Erik Rosseel(10), K. Devriendt(10), A. Spessot(10), G. Mannaert(9), J. Franco(9), B. Kaczer(9), S. Demuynck(8), T. Chiarella(8), A. Mocuta(8), Adrian Chasin(7), Aaron Thean(7), E. Dentoni Litta(7), O. Faynot(7)