Sergiu Clima

IMEC — Belgium

Engineering · Physical Sciences

40h-index5.2kcitations184works8.52yr avg
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Research Topics

Advanced Memory and Neural Computing(98), Ferroelectric and Negative Capacitance Devices(86), Semiconductor materials and devices(81), Phase-change materials and chalcogenides(38), Electronic and Structural Properties of Oxides(27)

Publications183 total

Nanosecond-scale transient defect spectroscopy of switching and relaxation dynamics in GeAsSe Ovonic Threshold Switching Devices
2025
Ab Initio Insights into the Reactivity of Precursors in Atomic Layer Deposition: A Case Study of GeAsSe
The Journal of Physical Chemistry C·2025· 1 cited
Enhanced Capacitive Memory Window by Improving Remnant Polarization in Ferroelectric Capacitors for Non-Destructive Read
IEEE Electron Device Letters·2025· 2 cited
Schottky contact modulation at a-GeSe/TiN interface for ovonic switching selectors
Applied Surface Science·2025· 2 citedOpen Access
Optimizing Pulse Conditions for Enhanced Memory Performance of Se-Based Selector-Only Memory
IEEE Journal of the Electron Devices Society·2025· 1 citedOpen Access
Improved Capacitive Memory Window for Non-Destructive Read in HZO-Based Ferroelectric Capacitors with Incorporation of Semiconducting IGZO
2024· 3 cited
Selector Only Memory: Exploring Atomic Mechanisms from First-Principles
2024· 4 cited
Understanding the Variability in GeAsTe Ovonic Threshold Switching Devices
2024· 2 citedOpen Access
Understanding Anti-ferroelectric Behavior and Wake-up in La Doped HZO Metal-FerroelectricMetal Capacitors Using Nucleation Limited Switching Model
2024· 5 cited
Electrical Demonstration of Sn–S-Based OTS Materials From Theoretical Design for Sustainable Innovation
IEEE Transactions on Electron Devices·2024· 4 citedOpen Access
Gate oxide reliability: upcoming trends, challenges, and opportunities
2024· 4 cited
Transition-state-theory-based interpretation of Landau double well potential for ferroelectrics
arXiv (Cornell University)·2024Open Access
Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory
2024· 15 citedOpen Access
La Doped HZO-Based 3D-Trench Metal-Ferroelectric-Metal Capacitors With High-Endurance (>10¹²) for FeRAM Applications
IEEE Electron Device Letters·2024· 31 cited
First-principles screening for sustainable OTS materials
Solid-State Electronics·2024· 1 citedOpen Access
Evidence of Heat‐Assisted Atomic Migration in GeSe Self‐Selecting Memory at High Operating Current Density
physica status solidi (RRL) - Rapid Research Letters·2024· 11 citedOpen Access
Chalcogenide Ovonic Threshold Switching Selector
Nano-Micro Letters·2024· 59 citedOpen Access
Pulse-Based Capacitive Memory Window with High Non-Destructive Read Endurance in Fully BEOL Compatible Ferroelectric Capacitors
2023· 28 cited
Resolving the discrepancy between coercive voltages extracted from C-V and P-V measurements in a ferroelectric capacitor
Solid-State Electronics·2023· 2 cited
In silico screening for As/Se-free ovonic threshold switching materials
npj Computational Materials·2023· 14 citedOpen Access
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Frequent Co-authors

M. Jurczak(30), B. Govoreanu(25), R. Degraeve(25), A. Fantini(20), Geoffrey Pourtois(19), Dirk J. Wouters(18), Gouri Sankar Kar(17), L. Goux(12), Ludovic Goux(12), G. Groeseneken(12), A. Redolfi(11), J. A. Kittl(8), M. Popovici(8), Yang Yin Chen(7), Christoph Adelmann(7), Jan Van Houdt(7), L. Altimime(6), Karl Opsomer(6), B. Kaczer(6), Leqi Zhang(6)