J. A. Kittl

KU Leuven — Belgium

Engineering · Physical Sciences

40h-index5.4kcitations294works0.02yr avg
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Research Topics

Semiconductor materials and devices(192), Semiconductor materials and interfaces(111), Advanced Memory and Neural Computing(68), Ferroelectric and Negative Capacitance Devices(64), Silicon and Solar Cell Technologies(56)

Publications293 total

Shallow electron traps in high-k insulating oxides
Solid-State Electronics·2021· 2 citedOpen Access
A Variation Robust Inference Engine Based on STT-MRAM with Parallel Read-Out
2020· 17 cited
A critical analysis of models and experimental evidence of negative capacitance stabilization in a ferroelectric by capacitance matching to an adjacent dielectric layer
arXiv (Cornell University)·2020· 1 citedOpen Access
Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"
arXiv (Cornell University)·2020Open Access
Inference engine benchmarking across technological platforms from CMOS to RRAM
Proceedings of the International Symposium on Memory Systems·2019· 11 cited
A Method to Calculate Correlation for Density Functional Theory on a Quantum Processor
arXiv (Cornell University)·2019· 7 citedOpen Access
SoC Logic Compatible Multi-Bit FeMFET Weight Cell for Neuromorphic Applications
2018· 123 cited
High-Accuracy Inference in Neuromorphic Circuits using Hardware-Aware Training
arXiv (Cornell University)·2018Open Access
High-Accuracy Inference in Neuromorphic Circuits using Hardware-Aware\n Training
arXiv (Cornell University)·2018Open Access
Ferroelectric Switching Delay as Cause of Negative Capacitance and the Implications to NCFETs
2018· 45 cited
Modeling of Negative Capacitance of Ferroelectric Capacitors as a Non-Quasi Static Effect
arXiv (Cornell University)·2018· 4 citedOpen Access
A Multi-Bit Neuromorphic Weight Cell Using Ferroelectric FETs, suitable for SoC Integration
IEEE Journal of the Electron Devices Society·2018Open Access
A Multi-Bit Neuromorphic Weight Cell using Ferroelectric FETs, suitable\n for SoC Integration
arXiv (Cornell University)·2017Open Access
A novel tensile Si (n) and compressive SiGe (p) dual-channel CMOS FinFET co-integration scheme for 5nm logic applications and beyond
2016· 30 cited
Intrinsic electron traps in atomic-layer deposited HfO2 insulators
Applied Physics Letters·2016· 57 cited
Modulation of the Schottky Barrier Height for CMOS advanced contacts
Microelectronic Engineering·2016· 2 citedOpen Access
Modulation of the Schottky barrier height for advanced contact schemes
2015· 2 cited
Germanium-related deep electron traps in ALD-grown HfO2 insulators studied through Exhaustive PhotoDepopulation Spectroscopy
Microelectronic Engineering·2015· 2 citedOpen Access
Switching mechanism in two-terminal vanadium dioxide devices
Nanotechnology·2015· 62 cited
Resistive switching on MgO‐based metal‐insulator‐metal structures grown by molecular beam epitaxy
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics·2014· 4 cited
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Frequent Co-authors

M. Jurczak(18), Dirk J. Wouters(14), L. Goux(12), Geoffrey Pourtois(11), B. Govoreanu(10), L. Altimime(10), R. Degraeve(9), Sergiu Clima(8), V. V. Afanas’ev(8), A. Lauwers(8), Karl Opsomer(7), Christoph Adelmann(7), Sven Van Elshocht(7), Karen Maex(7), Gouri Sankar Kar(6), A. Fantini(6), H. Bender(6), Małgorzata Pawlak(5), Christophe Detavernier(5), D.P. Brunco(5)