B. T. Chan

Engineering · Physical Sciences

14h-index527citations48works0.32yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(28), Semiconductor materials and devices(26), Quantum and electron transport phenomena(10), Advancements in Photolithography Techniques(5), Copper Interconnects and Reliability(5)

Publications48 total

(Invited) Metrology Along the Gate-All-Around Logic Roadmap: From Nanosheet to Complementary Field-Effect Transistors
ECS Meeting Abstracts·2024· 1 cited
Comparative Analysis of Middle Dielectric Isolation (MDI) Integration Approaches in Monolithic Complementary Field Effect Transistors: ‘MDI-First vs MDI-Last’
2024
Source-Drain Damage of Monolithic Complementary Field Effect Transistors: A Comprehensive Study of Failure Modes and Mitigation Strategies
2024
Integration of a Stacked Contact MOL for Monolithic CFET
2023· 10 cited
Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET
2023· 5 cited
Assessment of STI dry etch process variability by means of dynamic time warping technique
Japanese Journal of Applied Physics·2023· 2 citedOpen Access
Semi-damascene Integration of a 2-layer MOL VHV Scaling Booster to Enable 4-track Standard Cells
2022 International Electron Devices Meeting (IEDM)·2022· 7 cited
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing
2021
Uniform Spin Qubit Devices with Tunable Coupling in an All-Silicon 300 mm Integrated Process
Symposium on VLSI Technology·2021
Solid state qubits: how learning from CMOS fabrication can speed-up progress in Quantum Computing
Symposium on VLSI Technology·2021
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
arXiv (Cornell University)·2021· 1 citedOpen Access
A flexible 300 mm integrated Si MOS platform for electron- and hole-spin qubits exploration
2020· 33 cited
A Scalable One Dimensional Silicon Qubit Array with Nanomagnets
2020· 4 cited
Buried Power Rail Scaling and Metal Assessment for the 3 nm Node and Beyond
2020· 15 cited
TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design
2020· 3 cited
An Integrated Silicon MOS Single-Electron Transistor Charge Sensor for Spin-Based Quantum Information Processing
IEEE Electron Device Letters·2020· 17 cited
Buried Power Rail Integration with Si FinFETs for CMOS Scaling beyond the 5 nm Node
2020· 16 cited
Vertical Nanowire and Nanosheet FETs: Device Features, Novel Schemes for Improved Process Control and Enhanced Mobility, Potential for Faster & More Energy Efficient Circuits
2019· 39 cited
Multiphysics Simulation & Design of Silicon Quantum Dot Qubit Devices
2019· 18 cited
300 mm silicon quantum computing:A Silicon-Based Platform for Quantum Computing Device Technologies
Extended Abstracts of the 2019 International Conference on Solid State Devices and Materials·2019
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Frequent Co-authors

K. Devriendt(13), Stefan Kubicek(12), Julien Jussot(12), Erik Rosseel(11), E. Vecchio(11), D. Mocuta(11), Fahd A. Mohiyaddin(11), George Simion(11), B. Govoreanu(11), Iuliana Radu(11), Efrain Altamirano Sánchez(10), Niamh Waldron(10), Nadine Collaert(10), Nard Dumoulin Stuyck(10), S. Brus(9), Zheng Tao(9), Naoto Horiguchi(9), Ruoyu Li(9), A. Veloso(8), Geert Eneman(8)