Edward Beam

Physics and Astronomy · Physical Sciences

33h-index4.5kcitations140works0.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(61), Semiconductor Quantum Structures and Devices(58), Semiconductor materials and devices(35), Radio Frequency Integrated Circuit Design(28), Semiconductor Lasers and Optical Devices(26)

Publications140 total

Selective-injection GaN Heterojunction Bipolar Transistors with 275 kA/cm$^2$ Current Density
arXiv (Cornell University)·2024Open Access
Ferroelectric‐Gated HfZrO<sub>2</sub>/AlGaN/GaN High‐Electron‐Mobility Transistors with Regrown Contacts for Radio Frequency and Millimeter‐Wave Switch Applications
physica status solidi (a)·2023· 1 cited
Micro-Transfer Printing for Heterogeneous Integration of GaN and GaAs HEMTs
IEEE Transactions on Electron Devices·2023· 6 cited
First Demonstration of Vertical Superjunction Diode in GaN
2022 International Electron Devices Meeting (IEDM)·2022· 30 cited
Tu4E-4 Multi-channel Schottky-gate BRIDGE HEMT Technology for Millimeter-Wave Power Amplifier Applications
2022 IEEE/MTT-S International Microwave Symposium - IMS 2022·2022· 6 cited
Ferroelectric-Gated GaN HEMTs for RF and mm-Wave Switch Applications
2022· 8 cited
Monolithically Integrated Self-Biased Circulator for mmWave T/R MMIC Applications
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 11 cited
Multi-Channel Monolithic-Cascode HEMT (MC<sup>2</sup>-HEMT): A New GaN Power Switch up to 10 kV
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 48 cited
(Invited) Multi-Channel AlGaN/GaN Power Rectifiers: Breakthrough Performance up to 10 kV
ECS Transactions·2021· 2 cited
Interface-engineered barium magnetoplumbite–wide-bandgap semiconductor integration enabling 5G system-on-wafer solutions for full-duplexing phased arrays
Applied Physics Letters·2021· 12 cited
Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-<i>k</i> Bismuth Zinc Niobate Oxide
IEEE Transactions on Electron Devices·2021· 37 cited
An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity
Science Advances·2021· 24 citedOpen Access
5 kV Multi-Channel AlGaN/GaN Power Schottky Barrier Diodes with Junction-Fin-Anode
2020· 36 cited
Microwave Performance of Ferroelectric-Gated GaN HEMTs
2020· 3 cited
Origin of leakage current in vertical GaN devices with nonplanar regrown p-GaN
Applied Physics Letters·2020· 32 cited
Qorvo's Emerging GaN Technologies for mmWave Applications
2020· 19 cited
3.3 kV Multi-Channel AlGaN/GaN Schottky Barrier Diodes With P-GaN Termination
IEEE Electron Device Letters·2020· 96 cited
RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band
IEEE Electron Device Letters·2020· 76 citedOpen Access
Micro-transfer Printing of GaN HEMTs for Heterogeneous Integration and Flexible RF Circuit Design
2020· 5 cited
Quantum Hall Effect in an Epitaxial Nitride Semiconductor/Superconductor Heterostructure
Bulletin of the American Physical Society·2020
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Frequent Co-authors

Yu Cao(16), Alan Seabaugh(12), P. Saunier(10), Andy Xie(9), A. Ketterson(8), Cathy Lee(7), Michael L. Schuette(7), Patrick Fay(6), Jinqiao Xie(6), Ming Xiao(6), Yuhao Zhang(5), Xiang Gao(5), Kai Cheng(5), Tomás Palacios(4), B. Brar(4), T. S. Moise(4), Debdeep Jena(4), Huili Grace Xing(4), Yunwei Ma(4), W. Liu(4)