Debdeep Jena

Cornell University — United States

Physics and Astronomy · Physical Sciences

65h-index18.1kcitations567works4.82yr avg
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Research Topics

GaN-based semiconductor devices and materials(274), Ga2O3 and related materials(183), Semiconductor materials and devices(143), ZnO doping and properties(97), Semiconductor Quantum Structures and Devices(94)

Publications566 total

Effect of substrate miscut angle on critical thickness, structural and electronic properties of MBE-grown NbN films on c-plane sapphire
Applied Physics Letters·2026Open Access
Erratum: “Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy” [APL Mater. 13, 101117 (2025)]
APL Materials·2025Open Access
From atomic-scale understanding to wafer-scale growth: Delta-doped AlN/GaN/AlN XHEMTs on single-crystal AlN by molecular beam epitaxy
APL Materials·2025Open Access
High Mobility Multiple-Channel AlScN/GaN Heterostructures
arXiv (Cornell University)·2025Open Access
A Compact Model for Polar Multiple-Channel Field Effect Transistors: A Case Study in III-V Nitride Semiconductors
arXiv (Cornell University)·2025Open Access
Growth of tetragonal PtO by molecular-beam epitaxy and its integration into β-Ga2O3 Schottky diodes
APL Materials·2025· 1 citedOpen Access
Lorentzian Switching Dynamics in HZO-based FeMEMS Synapses for Neuromorphic Weight Storage
arXiv (Cornell University)·2025Open Access
Growth of conductive Si-doped α-Ga2O3 by suboxide molecular-beam epitaxy
APL Materials·2025· 2 citedOpen Access
Indium surfactant assisted molecular beam epitaxy of AlScN
APL Materials·2025· 1 citedOpen Access
Controlling the p-type conductivity of α-SnO thin films by potassium doping
APL Materials·2025Open Access
Transport properties of lattice-matched AlScN/GaN single- and multichannel heterostructures
Applied Physics Letters·2025· 2 cited
4.2 W/mm at 10 GHz in Silicon Delta-Doped AlN/GaN/AlN Pseudomorphic HEMTs With PECVD SiN Passivation
IEEE Electron Device Letters·2025· 3 cited
Velocity-field measurements in a GaN/AlN two-dimensional hole gas
Applied Physics Letters·2025· 3 cited
The effect of boron incorporation on leakage and wake-up in ferroelectric Al1−xScxN
Journal of Applied Physics·2025· 4 citedOpen Access
Low Temperature Electroluminescence of AlGaN based UV Edge Emitting LEDs grown by MBE on Bulk AlN Substrates
2025
A cesium-iodide surface treatment for enhancement of negative electron affinity photocathode chemical robustness
Journal of Applied Physics·2025· 2 citedOpen Access
Structural, electronic, and superconducting properties of MBE-grown tantalum nitride films on c-plane sapphire
Applied Physics Letters·2025· 2 citedOpen Access
MOCVD AlYN/GaN HEMTs with 66.5 mV/decade sub-threshold swing and 109 on/off ratio
Applied Physics Letters·2025· 2 citedOpen Access
Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to <i>β</i>-Ga2O3 by removing surface carbon
APL Materials·2025· 6 citedOpen Access
THz cyclotron resonance of a 2D hole gas in a GaN/AlN heterostructure
Applied Physics Letters·2025· 2 citedOpen Access
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Frequent Co-authors

Huili Grace Xing(36), Kazuki Nomoto(15), Zongyang Hu(13), Wenshen Li(9), Vladimir Protasenko(7), Rusen Yan(6), Austin Hickman(6), Akito Kuramata(5), Berardi Sensale‐Rodriguez(5), Guowang Li(5), Bo Song(5), Xiang Gao(5), Patrick Fay(5), Yu Cao(5), Samuel James Bader(5), Jia Guo(4), Ronghua Wang(4), Kohei Sasaki(4), Tohru Nakamura(4), Mingda Zhu(4)