Zongyang Hu

Chinese Academy of Sciences — China

Physics and Astronomy · Physical Sciences

29h-index3.6kcitations86works3.82yr avg
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Research Topics

GaN-based semiconductor devices and materials(48), Ga2O3 and related materials(42), Semiconductor materials and devices(29), ZnO doping and properties(19), Silicon Carbide Semiconductor Technologies(15)

Publications86 total

Simulation analysis of current collapse suppression in GaN HEMTs using a Si δ-doped cap layer
Micro and Nanostructures·2025
High-performance of low-fired (1-x)Na0.5Y0.5MoO4-xLi0.5Y0.5MoO4 ceramics and microstrip bandpass filters designs for LTCC
Ceramics International·2025· 3 cited
From Apelles’ Line to Vermeer’s Window:on the Problem of Light in the Convention of Representational Paintings
Advances in Art Science·2025Open Access
A human-inspired slow-fast dual-branch method for product quality prediction of complex manufacturing processes with hierarchical variations
Advanced Engineering Informatics·2024· 1 cited
Efficient model predictive control of boiler coal combustion based on NARX neutral network
Journal of Process Control·2024· 19 cited
Optimized Soot-Blowing Strategy for Coal-Fired Boilers Based on Deterioration Estimation of Heat Exchange Effectiveness
SSRN Electronic Journal·2024Open Access
GaN HEMTs Design and Modeling for 5G
2023· 1 cited
Digital Twin in smart manufacturing: remote control and virtual machining using VR and AR technologies
Structural and Multidisciplinary Optimization·2022· 66 cited
GaN HEMTs and MOSHEMTs for Power Switching Applications
Figshare·2022Open Access
Distributed polarization-doped GaN p–n diodes with near-unity ideality factor and avalanche breakdown voltage of 1.25 kV
Applied Physics Letters·2022· 7 citedOpen Access
ON-Resistance of Ga<sub>2</sub>O<sub>3</sub> Trench-MOS Schottky Barrier Diodes: Role of Sidewall Interface Trapping
IEEE Transactions on Electron Devices·2021· 39 cited
Trapping processes and band discontinuities in Ga2O3 FinFETs investigated by dynamic characterization and optically-assisted measurements
2021
Trapping and Detrapping Mechanisms in <i>β</i>-Ga₂O₃ Vertical FinFETs Investigated by Electro-Optical Measurements
IEEE Transactions on Electron Devices·2020· 35 cited
Guiding Principles for Trench Schottky Barrier Diodes Based on Ultrawide Bandgap Semiconductors: A Case Study in Ga₂O₃
IEEE Transactions on Electron Devices·2020· 63 cited
Impact of Residual Carbon on Avalanche Voltage and Stability of Polarization-Induced Vertical GaN p-n Junction
IEEE Transactions on Electron Devices·2020· 7 cited
Collaborative optimization for deep peak-shaving and ultra-clean emission of coal-fired boiler using flue gas recycling technology
Energy Sources Part A Recovery Utilization and Environmental Effects·2020· 8 cited
GaN HEMTs on Si With Regrown Contacts and Cutoff/Maximum Oscillation Frequencies of 250/204 GHz
IEEE Electron Device Letters·2020· 116 cited
Gallium nitride tunneling field-effect transistors exploiting polarization fields
Applied Physics Letters·2020· 12 cited
Field-Effect Transistors 5
Springer series in materials science·2020· 1 cited
Single and multi-fin normally-off Ga<sub>2</sub>O<sub>3</sub> vertical transistors with a breakdown voltage over 2.6 kV
2019· 105 cited
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Frequent Co-authors

Huili Grace Xing(45), Debdeep Jena(42), Kazuki Nomoto(34), Wenshen Li(23), Mingda Zhu(15), Bo Song(14), Xiang Gao(13), Patrick Fay(10), Ronghua Wang(9), Yuanzheng Yue(8), Jia Guo(8), Guowang Li(8), Yu Cao(8), Jai Verma(8), Meng Qi(7), Faiza Faria(6), Gregory L. Snider(6), Wayne Johnson(6), Kohei Sasaki(5), Akito Kuramata(5)