Jae Hwa Seo

Korea Electrotechnology Research Institute — South Korea

Engineering · Physical Sciences

16h-index714citations93works1.22yr avg
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Research Topics

Semiconductor materials and devices(68), Advancements in Semiconductor Devices and Circuit Design(60), GaN-based semiconductor devices and materials(29), Silicon Carbide Semiconductor Technologies(21), Nanowire Synthesis and Applications(12)

Publications93 total

Structural Optimization and Trap Effects on the Output Performance of 4H-SiC Betavoltaic Cell
Nanomaterials·2025Open Access
Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration
Scientific Reports·2025Open Access
Design Optimization of SiC CMOS FinFET for High-Temperature Next-Generation SoC Logic Applications
2025
Displacement Damage Effects Induced by Proton Irradiation in $\boldsymbol{\beta}-\mathbf{Ga}_{2}\mathbf{O}_{3}$ Schottky Barrier Diodes
2025
A Pilot Study of a Modified Swallowing Screening Tool for Critically Ill Patients in the Intensive Care Unit
Dysphagia·2024Open Access
Degeneration mechanism of 30 MeV and 100 MeV proton irradiation effects on 1.2 kV SiC MOSFETs
Radiation Physics and Chemistry·2024· 3 cited
Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation
Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena·2024· 1 citedOpen Access
Displacement damage effect of proton irradiation on vertical β-Ga2O3 and SiC Schottky barrier diodes (SBDs)
Journal of Science Advanced Materials and Devices·2024· 5 citedOpen Access
IGZO Channel VCT(Vertical Channel Transistor) Technology for sub-10nm DRAM: Challenges and Opportunites
2024· 3 citedOpen Access
Degeneration Mechanism of 30 Mev and 100 Mev Proton Irradiation Effects on 1.2 Kv Sic Mosfets
SSRN Electronic Journal·2024Open Access
Bulk-fin field-effect transistor-based capacitorless dynamic random-access memory and its immunity to the work-function variation effect
Japanese Journal of Applied Physics·2022· 6 citedOpen Access
Design of a Capacitorless DRAM Based on Storage Layer Separated Using Separation Oxide and Polycrystalline Silicon
Electronics·2022· 5 citedOpen Access
Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped Structure
Nanomaterials·2022· 8 citedOpen Access
A Capacitorless DRAM Based on Bulk FinFET for the Immune of Work-Function Variation Effect
2022
Simulation of CMOS logic inverter based on vertically stacked polycrystalline silicon nanosheet gate-all-around MOSFET and its electrical characteristics
Current Applied Physics·2022· 3 cited
Analysis and Optimization for Characteristics of Vertical GaN Junctionless MOSFETs Depending on Specifications of GaN Substrates
Journal of Electrical Engineering and Technology·2022· 1 cited
Design of Capacitorless DRAM Based on Polycrystalline Silicon Nanotube Structure
IEEE Access·2021· 15 citedOpen Access
Polycrystalline-Silicon-MOSFET-Based Capacitorless DRAM With Grain Boundaries and Its Performances
IEEE Access·2021· 16 citedOpen Access
Fabrication of AlGaN/GaN Fin-Type HEMT Using a Novel T-Gate Process for Improved Radio-Frequency Performance
IEEE Access·2020· 20 citedOpen Access
Characterization of a Capacitorless DRAM Cell for Cryogenic Memory Applications
IEEE Electron Device Letters·2019· 30 cited
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Frequent Co-authors

In Man Kang(46), Young Jun Yoon(36), Jung‐Hee Lee(29), Seongjae Cho(17), Dong-Hyeok Son(11), Young‐Woo Jo(10), Jin‐Hyuk Bae(10), Min Su Cho(8), Chul‐Ho Won(7), Sang Ho Lee(7), Ki‐Sik Im(6), Hye Rim Eun(6), Jaewon Jang(6), Eou‐Sik Cho(5), S. Cristoloveanu(5), Jin Park(5), Geon Uk Kim(5), Sin‐Hyung Lee(5), Hyuck‐In Kwon(5), Jong‐Ho Lee(4)