Ki‐Sik Im

Korea Polytechnic University — South Korea

Physics and Astronomy · Physical Sciences

19h-index1.4kcitations93works0.62yr avg
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Research Topics

GaN-based semiconductor devices and materials(79), Semiconductor materials and devices(49), Advancements in Semiconductor Devices and Circuit Design(39), Ga2O3 and related materials(28), Silicon Carbide Semiconductor Technologies(22)

Publications93 total

The effects of different rapid thermal annealing times on ohmic contacts to the AlGaN/GaN HEMT structure
Surfaces and Interfaces·2025
Temperature-dependent electrical characteristics of normally-off triangular-shaped GaN nanowire wrap-gate transistors
Journal of Materials Science Materials in Electronics·2025
Effects of Carrier Trapping and Noise in Triangular-Shaped GaN Nanowire Wrap-Gate Transistor
Nanomaterials·2025Open Access
Temperature dependence electron conduction in horizontally aligned trapezoidal-shaped AlGaN/GaN nanowire wrap-gate transistor
Journal of Materials Science Materials in Electronics·2024· 1 cited
Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
physica status solidi (a)·2024· 2 citedOpen Access
Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor
Nanomaterials·2023· 5 citedOpen Access
Impact of Fin Width on Low-Frequency Noise in AlGaN/GaN FinFETs: Evidence for Bulk Conduction
IEEE Access·2023· 8 citedOpen Access
Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets
Micromachines·2022· 1 citedOpen Access
Low-Frequency Noise Characteristics in HfO2-Based Metal-Ferroelectric-Metal Capacitors
Materials·2022· 6 citedOpen Access
Electrical and Structural Properties of CVD-Graphene Oxidized Using KMnO4/H2SO4 Solution
Crystals·2022· 2 citedOpen Access
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
Nanomaterials·2022· 3 citedOpen Access
On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
Applied Physics Letters·2022· 9 cited
Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer
Crystals·2021· 9 citedOpen Access
Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application
Crystals·2021· 22 citedOpen Access
Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
Crystals·2021· 3 citedOpen Access
Effect of <i>In-Situ</i> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
IEEE Journal of the Electron Devices Society·2021· 6 citedOpen Access
Influence of Thermal Annealing on the PdAl/Au Metal Stack Ohmic Contacts to p-AlGaN
Crystals·2020· 3 citedOpen Access
Mobility Fluctuations in a Normally-Off GaN MOSFET Using Tetramethylammonium Hydroxide Wet Etching
IEEE Electron Device Letters·2020· 10 cited
Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
Crystals·2020· 8 citedOpen Access
Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions
Crystals·2020· 12 citedOpen Access
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Frequent Co-authors

Jung‐Hee Lee(37), S. Cristoloveanu(19), Jae‐Hoon Lee(14), Dong‐Seok Kim(10), Hee‐Sung Kang(10), Young‐Woo Jo(9), Dong-Hyeok Son(9), Ki-Won Kim(8), Chul‐Ho Won(8), In Man Kang(7), Sindhuri Vodapally(7), Sung Jin An(7), Jong‐Bong Ha(5), Jae Hwa Seo(5), Yong‐Tae Kim(5), Christoforos Theodorou(4), Young-Ho Bae(4), Jaehoon Lee(3), Maryline Bawedin(3), Raphaël Caulmilone(3)