Jae‐Hoon Lee

Physics and Astronomy · Physical Sciences

20h-index1.5kcitations83works2.02yr avg
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Research Topics

GaN-based semiconductor devices and materials(69), Ga2O3 and related materials(37), ZnO doping and properties(27), Semiconductor materials and devices(23), Silicon Carbide Semiconductor Technologies(10)

Publications83 total

A Strong Gravitational Lens Is Worth a Thousand Dark Matter Halos: Inference on Small-scale Structure Using Sequential Methods
The Astrophysical Journal·2024· 4 citedOpen Access
A Strong Gravitational Lens Is Worth a Thousand Dark Matter Halos: Inference on Small-Scale Structure Using Sequential Methods
arXiv (Cornell University)·2024Open Access
High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
Nanomaterials·2022· 3 citedOpen Access
Substrate Effects on the Electrical Properties in GaN-Based High Electron Mobility Transistors
Crystals·2021· 10 citedOpen Access
Improved Noise and Device Performances of AlGaN/GaN HEMTs with In Situ Silicon Carbon Nitride (SiCN) Cap Layer
Crystals·2021· 9 citedOpen Access
Growth of High Quality GaN on Si (111) Substrate by Using Two-Step Growth Method for Vertical Power Devices Application
Crystals·2021· 22 citedOpen Access
25.4 A 20nm 6GB Function-In-Memory DRAM, Based on HBM2 with a 1.2TFLOPS Programmable Computing Unit Using Bank-Level Parallelism, for Machine Learning Applications
2021· 179 cited
Effects of Al Composition and High-Temperature Atomic Layer-Deposited Al2O3 Layer on the Leakage Current Characteristics of AlGaN/GaN Schottky Barrier Diodes
Crystals·2021· 3 citedOpen Access
Effect of <i>In-Situ</i> Silicon Carbon Nitride (SiCN) Cap Layer on Performances of AlGaN/GaN MISHFETs
IEEE Journal of the Electron Devices Society·2021· 6 citedOpen Access
Effects of GaN Buffer Resistance on the Device Performances of AlGaN/GaN HEMTs
Crystals·2020· 8 citedOpen Access
Low-Frequency Noise Behavior of AlGaN/GaN HEMTs with Different Al Compositions
Crystals·2020· 12 citedOpen Access
Performance of Recessed Anode AlGaN/GaN Schottky Barrier Diode Passivated With High-Temperature Atomic Layer-Deposited Al<sub>2</sub>O<sub>3</sub> Layer
IEEE Transactions on Electron Devices·2018· 16 cited
Patterned Sapphire and Chip Separation Technique in InGaN-Based LEDs
2017
Performance enhancement of AlGaN/GaN nanochannel omega-FinFET
Solid-State Electronics·2016· 5 cited
Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode
Journal of Nanoscience and Nanotechnology·2016· 5 cited
Generalized Network Generation Method for Small-World Network and Scale-Free Network
The Journal of Korean Institute of Communications and Information Sciences·2016· 1 cited
Entanglement entropy from one-point functions in holographic states
Journal of High Energy Physics·2016· 22 citedOpen Access
Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor
Journal of Nanoscience and Nanotechnology·2016· 7 cited
Temperature-dependent characteristics of AlGaN/GaN FinFETs with sidewall MOS channel
Solid-State Electronics·2016· 13 cited
Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors
Japanese Journal of Applied Physics·2016· 12 cited
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Frequent Co-authors

Jung‐Hee Lee(32), Ki‐Sik Im(13), Sung‐Ho Hahm(6), Jae-Hyun Jeong(5), S. Cristoloveanu(5), Hee‐Sung Kang(5), Yong-Chun Kim(4), Young‐Woo Jo(4), Dong‐Seok Kim(4), Myoung‐Bok Lee(4), Wantae Lim(3), Ki-Se Kim(3), Jong Kyu Kim(3), Jong‐Lam Lee(3), Sindhuri Vodapally(3), Dong-Hyeok Son(3), Yong Soo Lee(3), Ki-Won Kim(3), Sung‐Bum Bae(3), Sung Jin An(3)