G. Lian

Xi'an University of Technology — China

Engineering · Physical Sciences

13h-index788citations34works0.22yr avg
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Research Topics

Semiconductor materials and devices(11), Copper Interconnects and Reliability(9), Integrated Circuits and Semiconductor Failure Analysis(7), Electronic Packaging and Soldering Technologies(6), Electron and X-Ray Spectroscopy Techniques(6)

Publications34 total

Bearing Fault Diagnosis Method Based on BiTCNTransformer
2025
Optimal Scheduling Strategy of Electric Vehicles Integrated Virtual Power Plant Based on Improved SAO Algorithm
2025
A Hybrid PIR and Repetitive Control Scheme for Circulating Current Suppression in Modular Multilevel Converters
2025
Probing carbon black deagglomeration in lithium-ion battery cathode manufacturing using powder resistivity metrics
Journal of Power Sources·2025Open Access
Switch Open-Circuit Fault Diagnosis of the Vienna Rectifier Using the Transformer–BiTCN Network with Improved Snow Geese Algorithm Optimization
Electronics·2025· 1 citedOpen Access
Effect of carbon blacks on electrical conduction and conductive binder domain of next-generation lithium-ion batteries
Journal of Power Sources·2023· 75 citedOpen Access
Co, Ni-Free Ultrathick Free-Standing Dry Electrodes for Sustainable Lithium-Ion Batteries
ACS Applied Energy Materials·2023· 18 citedOpen Access
Microstructure of Conductive Binder Domain for Electrical Conduction in Next‐Generation Lithium‐Ion Batteries
Energy Technology·2023· 3 citedOpen Access
Technology challenges and enablers to extend Cu metallization to beyond 7 nm node
2019· 6 cited
Mechanisms of Electromigration Damage in Cu Interconnects
2018· 26 cited
Fully Aligned Via Integration for beyond 7 nm
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials·2018
Process Challenges in Fully Aligned Via Integration for sub 32 nm Pitch BEOL
2018· 1 cited
Future on-chip interconnect metallization and electromigration
2018· 69 cited
Fully aligned via integration for extendibility of interconnects to beyond the 7 nm node
2017· 20 cited
Line Resistance Reduction in Advanced Copper Interconnects
IEEE Electron Device Letters·2017· 10 cited
Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node
2017· 30 cited
Electromigration and resistivity in on-chip Cu, Co and Ru damascene nanowires
2017· 43 cited
Cobalt/copper composite interconnects for line resistance reduction in both fine and wide lines
2017· 22 cited
Microstructure modulation for resistance reduction in copper interconnects
2017· 12 cited
Application of Low Energy Broad Ion Beam Milling to Improve the Quality of FIB Prepared TEM Samples
Microscopy and Microanalysis·2013· 1 cited
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Frequent Co-authors

Muhammad Zeshan Ali(9), Huai Huang(8), H. Shobha(8), R. Patlolla(8), J. Demarest(7), S. Nguyen(6), Jaehak Chung(6), James J. Kelly(5), Benjamin D. Briggs(5), Nicholas A. Lanzillo(5), Devika Sil(5), T. Standaert(5), D. Edelstein(5), Griselda Bonilla(5), Rachel M. Smith(4), Denis Cumming(4), Chunhua Hu(4), K. Motoyama(4), B. Peethala(4), T. Spooner(4)