Emmanuel Nolot

Commissariat à l'Énergie Atomique et aux Énergies Alternatives — France

Materials Science · Physical Sciences

17h-index929citations114works0.92yr avg
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Research Topics

Phase-change materials and chalcogenides(27), Semiconductor materials and devices(25), Chalcogenide Semiconductor Thin Films(19), Electron and X-Ray Spectroscopy Techniques(18), X-ray Spectroscopy and Fluorescence Analysis(16)

Publications114 total

Layer-dependent Raman polarization anisotropy in MoS₂ films grown by 200 mm-scale atomic layer deposition
Scientific Reports·2026Open Access
300 Mm sSOI engineering with ultra thin buried oxide
Solid-State Electronics·2025
A wafer-scale method for the characterization of 2D MoS2 layers
Applied Surface Science·2025
[Management of neuropathic pain: Don't lose hope!]
PubMed·2025
Sb/Te Ratio Engineering in Phase-Change Memory for High SET Speed and Large Memory Window
2025
Stoichiometry Tuning of the Crystallized Ge-Sb-Te Phase in Ge-Rich Ge-Sb-Te Thin Films By Dopant Introduction
ECS Meeting Abstracts·2025
The role of Sb-over-Te ratio on the structural evolution of GeSbTe phase-change materials
Scientific Reports·2025Open Access
Contribution of Raman Spectroscopy to Strain Metrology in Trench Array Structures : AM: Advanced Metrology
2025
In-line Raman spectroscopy for semiconductors strain engineering and control : Topic/Category AM: Advanced Metrology
2025
Reliability Performances Tuning in Ge-rich GeSbTe Phase-Change Memory Thanks to Multilayered Ge//GeSbTe Stacks
2025
Instrumentation and uncertainty evaluation for absolute characterization of thin films and nanostructured surfaces in advanced optical metrology
Metrologia·2025· 2 citedOpen Access
Process challenges of the STRASS technique to increase the electron mobility in advanced FD-SOI nMOSFETs
MRS Advances·2025· 2 citedOpen Access
300 Mm Ssoi Engineering with Ultra Thin Box
SSRN Electronic Journal·2025Open Access
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
ECS Meeting Abstracts·2024
GeN Underlayer for Segregation-Tolerant Ge-Rich GeSbTe-Based Phase-Change Memory Featuring Low Current, Low SET Drift, and High-Temperature Data Retention
IEEE Transactions on Electron Devices·2024
The effects of Sb/Te ratio on crystallization kinetics in Ge-rich GeSbTe phase-change materials
Journal of Applied Physics·2024· 9 citedOpen Access
Selective Epitaxial Growth of SiGe(:B) for Advanced p-Type Fd-SOI
ECS Transactions·2024
Spectroscopic investigation of oxidation in GaSe 2D layered materials
Microelectronic Engineering·2024· 6 citedOpen Access
Sputtered niobium pentoxide layers for optical applications
Thin Solid Films·2024Open Access
Étude de l'oxydation du séléniure de gallium (GaSe) à l'air : Approche XPS et Raman
SPIRE - Sciences Po Institutional REpository·2024
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Frequent Co-authors

G. Navarro(14), M. Bernard(13), C. Sabbione(10), J. Garrione(9), G. Bourgeois(9), D. Rouchon(8), M. C. Cyrille(8), E. Nowak(8), Jean‐Michel Hartmann(8), Yann Mazel(7), N. Rochat(7), N. Castellani(6), F. Fillot(6), Nicolas Bernier(6), Stéphane Cadot(5), F. Martín(5), L. Prazakova(5), Yves Ménesguen(5), Marie‐Christine Lépy(5), M. Veillerot(5)