E. Nowak

Commissariat à l'Énergie Atomique et aux Énergies Alternatives — France

Engineering · Physical Sciences

41h-index8.8kcitations273works0.02yr avg
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Research Topics

Semiconductor materials and devices(149), Advanced Memory and Neural Computing(104), Advancements in Semiconductor Devices and Circuit Design(97), Ferroelectric and Negative Capacitance Devices(88), Integrated Circuits and Semiconductor Failure Analysis(29)

Publications273 total

Optimization of ALD High-K Dielectric/GaN Interface for GaN Power Transistors
ECS Meeting Abstracts·2025
Integration of W vias for individual coupling control in 28 nm FD-SOI qubit arrays
Solid-State Electronics·2025
Improved Normally-Off 1200 V GaN-on-Si MOS-HEMT with Novel AlGaN Back Barrier
2025
Current Challenges and New Perspectives in Cyclic Cushing's Syndrome
Endocrine Abstracts·2025
Ischemic stroke care for patients affiliated to the French agricultural health insurance scheme: A national study
Revue Neurologique·2025Open Access
Enhanced threshold voltage tuning in FD-SOI MOSFET with ferroelectric buried oxide
Solid-State Electronics·2024
Toward the Understanding on Threshold Voltage Drift Mechanisms in GaN MOSc-HEMTs Through the Influence of Device Architecture
IEEE Transactions on Electron Devices·2024
Analysis of Healthcare Use Before the Diagnosis of Radiologically Isolated Syndrome Does Not Support the Existence of a Prodromal Phase in Multiple Sclerosis
SSRN Electronic Journal·2024Open Access
<i>Ab initio</i> investigations of two-dimensional carrier gas at interfaces in GaN/AlN and GaN/AlN/Al2O3 heterostructures
Journal of Applied Physics·2023· 1 cited
Structural and Electrostatic Confinement of a Single Electron in a Scalable $2\mathbf{D}$ Array of Quantum Dots
2023
Reliability of GaN MOSc-HEMTs: From TDDB to Threshold Voltage Instabilities (Invited)
2023· 8 cited
Methodology for an efficient characterization flow of industrial grade Si-based qubit devices
2022 International Electron Devices Meeting (IEDM)·2022· 3 cited
Specificities of linear Si QD arrays integration and characterization
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)·2022· 4 citedOpen Access
High-Performance Operation and Solder Reflow Compatibility in BEOL-Integrated 16-kb HfO<sub>2</sub>: Si-Based 1T-1C FeRAM Arrays
IEEE Transactions on Electron Devices·2022· 22 citedOpen Access
Nano-analytical investigation of the forming process in an HfO2-based resistive switching memory
Journal of Applied Physics·2021· 6 citedOpen Access
Plenary Session
2021 IEEE International Electron Devices Meeting (IEDM)·2021Open Access
Material and integration challenges for large scale Si quantum computing
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 5 citedOpen Access
16kbit HfO<sub>2</sub>:Si-based 1T-1C FeRAM Arrays Demonstrating High Performance Operation and Solder Reflow Compatibility
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 28 citedOpen Access
A new FDSOI spin qubit platform with 40nm effective control pitch
2021 IEEE International Electron Devices Meeting (IEDM)·2021· 24 citedOpen Access
Advances in Emerging Memory Technologies: From Data Storage to Artificial Intelligence
Applied Sciences·2021· 117 citedOpen Access
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Frequent Co-authors

Ernest Y. Wu(7), H.‐S. Philip Wong(6), J. Kedzierski(6), D. Harmon(6), Wilfried Haensch(5), M. Ieong(5), David Fried(5), A. Vayshenker(5), Elisa Vianello(5), K. Bernstein(4), I. Aller(4), Thomas Ludwig(4), B.A. Rainey(4), L. Grenouillet(4), R. Logan(4), D.J. Frank(3), T. Kanarsky(3), D. Boyd(3), P.E. Cottrell(3), R.‐P. Vollertsen(3)