M. Ieong

Engineering · Physical Sciences

35h-index5.7kcitations116works0.02yr avg
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Research Topics

Advancements in Semiconductor Devices and Circuit Design(92), Semiconductor materials and devices(91), Integrated Circuits and Semiconductor Failure Analysis(27), Silicon Carbide Semiconductor Technologies(16), Semiconductor materials and interfaces(14)

Publications115 total

Chiplet-based System-on-Chip for Edge Artificial Intelligence
2021· 17 cited
Semiconductor Industry Driven by Applications: Artificial Intelligence and Internet-of-Things
2018· 2 cited
Foreword Special Issue on Advanced Technology for Ultra-Low Power Electronic Devices
IEEE Journal of the Electron Devices Society·2016Open Access
IEEE Journal of the Electron Devices Society publication information
IEEE Journal of the Electron Devices Society·2016Open Access
IEEE Journal of the Electron Devices Society publication information
IEEE Journal of the Electron Devices Society·2016Open Access
28nm metal-gate high-K CMOS SoC technology for high-performance mobile applications
2011· 19 cited
Welcome from the general chair
2010
IEDM Executive Committee
2010
Transistor-and Circuit-Design Optimization for Low-Power CMOS
IEEE Transactions on Electron Devices·2008· 35 cited
Opportunities and Challenges of Germanium Channel MOSFETs
2007· 4 cited
High Performance Transistors Featured in an Aggressively Scaled 45nm Bulk CMOS Technology
2007· 20 cited
High Performance and Low Leakage CMOS for 45nm Low Power Technology and Beyond
2007
Novel Enhanced Stressor with Graded Embedded SiGe Source/Drain for High Performance CMOS Devices
2006· 25 cited
Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates
2006· 6 cited
Poly-Si/AlN/HfSiO Stack for Ideal Threshold Voltage and Mobility in Sub-100 nm MOSFETs
2006· 17 cited
Investigation of FinFET Devices for 32nm Technologies and Beyond
2006· 53 cited
Novel Approach to Reduce Source/Drain Series Resistance in High Performance CMOS Devices Using Self-Aligned CoWP Process for 45nm Node UTSOI Transistors with 20nm Gate Length
2006· 1 cited
Nano-CMOS scaling: Novel devices and materials
2006
Three-dimensional integrated circuits
IBM Journal of Research and Development·2006· 699 cited
Germanium channel MOSFETs: Opportunities and challenges
IBM Journal of Research and Development·2006· 185 cited
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Frequent Co-authors

H.‐S. Philip Wong(15), D. Boyd(14), J. Kedzierski(13), T. Kanarsky(13), Wilfried Haensch(13), J. A. Ott(12), K.W. Guarini(9), David Fried(9), Min Yang(7), K. Chan(7), Anna W. Topol(6), B. Doris(6), E. Nowak(6), J. Newbury(6), V. Chan(6), D.J. Frank(5), R. Roy(5), J. O. Chu(5), Zhibin Ren(5), L. Shi(5)