Koji Nozaki

Engineering · Physical Sciences

14h-index862citations29works0.02yr avg
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Research Topics

Advancements in Photolithography Techniques(19), Nanofabrication and Lithography Techniques(10), Semiconductor materials and devices(7), Medical Imaging Techniques and Applications(3), Advanced Surface Polishing Techniques(3)

Publications29 total

Development of Photoresists for ArF Excimer Laser Lithography
Journal of Synthetic Organic Chemistry Japan·2018
A Resolution Enhancement Material for 193-nm Lithography Comprising 2-Hydroxybenzyl Alcohol and Poly(vinyl alcohol) with Uniform Resist Pattern Shrinkage
Journal of Photopolymer Science and Technology·2011Open Access
The Photopolymer Science and Technology Award
Journal of Photopolymer Science and Technology·2010Open Access
Material Innovations for 193-nm Resists
Journal of Photopolymer Science and Technology·2010· 5 citedOpen Access
Fabrication of 0.1μm-gate InP HEMTs using i-line lithography
2003· 1 cited
Overcoat materials for acrylate resists to enhance their resolution
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2003· 6 cited
193 nm phase-shifting lithography with single layer resist for VLSIs beyond 1 G-bit DRAM
2002· 1 cited
High-performance EB chemically amplified resists using alicyclic protective groups
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2000· 2 cited
High etch-resistant EB resists employing adamantyl protective groups and their application for 248-nm lithography.
Journal of Photopolymer Science and Technology·2000· 3 citedOpen Access
Evaluation of Alicyclic Methacrylate Resist with a .GAMMA.-Butyrolactone Protective Group for 193-nm Lithography.
Journal of Photopolymer Science and Technology·1998· 5 citedOpen Access
Preparation and Properties of a New Hard Material of Composition C3N3.6-4.5O1.1-1.2H4.1-4.2
Chemistry Letters·1997· 2 cited
New Protective Groups in Alicyclic Methacrylate Polymers for 193-nm Resists.
Journal of Photopolymer Science and Technology·1997· 30 citedOpen Access
A New Single-Layer Resist for 193-nm Lithography
Japanese Journal of Applied Physics·1996· 9 cited
Impact of 2-Methyl-2-Adamantyl Group Used for 193-nm Single-Layer Resist
Journal of Photopolymer Science and Technology·1996· 42 citedOpen Access
A Novel Polymer for a 193-nm Resist.
Journal of Photopolymer Science and Technology·1996· 34 citedOpen Access
<title>Environmentally stable chemically amplified resist effects of organic salt additives</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1995
<title>Evaluation of chemically amplified resist based on adamantyl methacrylate for 193-nm lithography</title>
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·1995· 19 cited
Study of ArF resist material in terms of transparency and dry etch resistance.
Journal of Photopolymer Science and Technology·1995· 11 citedOpen Access
Characteristics of Silicon-Based Negative Resists in ArF Excimer Laser Lithography.
Journal of Photopolymer Science and Technology·1995· 3 citedOpen Access
Molecular Design and Synthesis of 3-Oxocyclohexyl Methacrylate for ArF and KrF Excimer Laser Resist
Chemistry of Materials·1994· 32 cited
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Frequent Co-authors

Ei Yano(11), Satoshi Takechi(9), Miwa Igarashi(6), Masayuki Kawaguchi(5), Yuko Kaimoto(5), Naomichi Abe(5), Isamu Hanyu(5), Makoto Takahashi(4), Takahisa Namiki(4), Seiji Motojima(3), Haruhisa Shirahama(3), Junichi Kon(3), Hiroshi Iwanaga(2), Masaru Hashimoto(2), Toshiyuki Kan(2), Mitsutoshi Yanagiya(2), Takeshi Matsumoto(2), Akiko Kotachi(2), Keiji Watanabe(2), Keiji Watanabe(2)