Satoru Yoshimura

Osaka Gakuin University — Japan

Physics and Astronomy · Physical Sciences

19h-index1.5kcitations237works0.52yr avg
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Research Topics

Magnetic properties of thin films(70), Semiconductor materials and devices(49), Ion-surface interactions and analysis(48), Magnetic Properties and Applications(35), Magnetic confinement fusion research(32)

Publications237 total

Identification of fragments from triethylamine and generation of molecular ions containing carbon and nitrogen
AIP Advances·2025· 1 citedOpen Access
50 eV O+ ion induced deposition of tin dioxide using tetramethyltin
Heliyon·2025Open Access
Fabrication of HCP-Co based thin films with perpendicular magnetization, low saturation magnetic field, and high saturation magnetization
Journal of the Society of Materials Engineering for Resources of Japan·2025Open Access
Low-energy N+ ion beam induced chemical vapor deposition using tetraethyl orthosilicate, hexamethyldisiloxane, or hexamethyldigermane
AIP Advances·2024Open Access
Low-energy O+ or SiO+ ion beam induced deposition of silicon oxide using hexamethyldisiloxane
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2024· 2 cited
Investigation of Fabrication Conditions and Acceleration of Crystallization of α"-Fe<sub>16</sub>N<sub>2</sub> Thin Film Fabricated by Pulsed DC Reactive Sputtering for High Density Magnetic Recording Media Application
Journal of the Society of Materials Engineering for Resources of Japan·2024Open Access
Silicon oxide film formation by spraying tetraethyl orthosilicate onto substrate with simultaneous low-energy SiO+ ion-beam irradiation
AIP Advances·2023· 1 citedOpen Access
Deposition of germanium dioxide films by the injection of oxygen ion beam in conjunction with hexamethyldigermane
Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment·2023· 3 cited
Low energy Si+, SiCH5+, or C+ beam injections to silicon substrates during chemical vapor deposition with dimethylsilane
Heliyon·2023· 8 citedOpen Access
Excellent magnetic properties in multiferroic BiFeO3 based thin films for magnetic devices application
Nano-Structures & Nano-Objects·2023· 15 cited
Effect of B-site Substitution Element and Substitution Amount on Magnetic Properties in (Bi,La)(Fe<sub>1-y</sub>M<sub>y</sub>)O<sub>3</sub> (M = Co, Ni) Ferromagnetic and Ferroelectric Thin Films
2023
Eff ects of substituted elements and amounts of B-site on magnetic properties of ferromagnetic and ferroelectric（Bi,La）（Fe&lt;sub&gt;1-y&lt;/sub&gt;&lt;i&gt;M&lt;/i&gt;&lt;sub&gt;y&lt;/sub&gt;）O&lt;sub&gt;3&lt;/sub&gt;（&lt;i&gt;M&lt;/i&gt;=Ni, Co）thin fi lms 研 究 論 文
Journal of the Society of Materials Engineering for Resources of Japan·2023· 1 citedOpen Access
Low-energy Ar+ ion-beam-induced chemical vapor deposition of silicon dioxide films using tetraethyl orthosilicate
Heliyon·2023· 4 citedOpen Access
Optimizing the Reactive Ion Etching Conditions with Minimal Damage for High Functional Magnetic Nano Device Application in Bifeo3-Based Thin Film by Eu/Co Substitution
SSRN Electronic Journal·2023Open Access
Injection of low-energy SiCH5+ ion-beam to Si substrate during chemical vapor deposition process using methylsilane
AIP Advances·2022· 2 citedOpen Access
Investigations on Spintronic RFeO&lt;sub&gt;3&lt;/sub&gt; Crystals Grown by Optical Floating Zone Technique
International Journal of the Society of Materials Engineering for Resources·2022Open Access
Development of (Bi&lt;sub&gt;0.5&lt;/sub&gt;&lt;i&gt;L&lt;/i&gt;&lt;sub&gt;0.5&lt;/sub&gt;)(Fe&lt;sub&gt;0.7&lt;/sub&gt;Co&lt;sub&gt;0.3&lt;/sub&gt;)O&lt;sub&gt;3&lt;/sub&gt; (&lt;i&gt;L&lt;/i&gt;=La, Nd, Sm, Gd, Dy) Thin Films with Excellent Magnetic Properties for Magnetic Device Application
International Journal of the Society of Materials Engineering for Resources·2022· 3 citedOpen Access
Observation of clear magnetization and polarization reversal by local electric field in BiFeO₃-based multiferroic thin film with using metallic MFM tip with optimized magnetization
2022 IET International Conference on Engineering Technologies and Applications (IET-ICETA)·2022
Low-energy oxygen ion beam induced chemical vapor deposition using methylsilane or dimethylsilane for the formation of silicon dioxide films
Thin Solid Films·2022· 11 cited
Low-energy Ar+ ion beam induced chemical vapor deposition of silicon carbide films using dimethylsilane
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms·2022· 4 cited
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Frequent Co-authors

Masato Kiuchi(20), Satoshi Sugimoto(14), Hitoshi Saito(11), Satoshi Hamaguchi(11), Genta Egawa(7), Kensuke Murai(7), Kiyohiro Hine(6), Kazumasa Ikuse(5), M. Terauchi(5), Mikihiko Nishitani(5), Wei Lü(4), Katsuhisa Kitano(4), Takae Takeuchi(4), Yukio Nozaki(3), Yiming Song(3), Jun Hashimoto(3), S. Okada(3), Takashi Maekawa(3), Y. Terumichi(3), M. Kuppan(3)