H. Ryssel

Fraunhofer Institute for Integrated Systems and Device Technology — Germany

Engineering · Physical Sciences

37h-index6.4kcitations550works0.02yr avg
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Research Topics

Silicon and Solar Cell Technologies(179), Semiconductor materials and devices(165), Ion-surface interactions and analysis(142), Integrated Circuits and Semiconductor Failure Analysis(141), Semiconductor materials and interfaces(92)

Publications550 total

Amplitude modulated resonant push-pull driver for piezoelectric transformers in switching power applications
Fraunhofer-Publica (Fraunhofer-Gesellschaft)·2022· 1 citedOpen Access
Mass Separation Issues for the Implantation of Doubly Charged Aluminum Ions
2018
Ion Implantation of Polypropylene Films for the Manufacture of Thin Film Capacitors
2016
Thermal Laser Separation – A Novel Dicing Technology Fulfilling the Demands of Volume Manufacturing of 4H-SiC Devices
Materials science forum·2015· 17 cited
Out-diffusion of cesium and rubidium from amorphized silicon during solid-phase epitaxial regrowth
2014
Modification of polypropylene films for thin film capacitors by ion implantation
2014· 1 cited
Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs
Materials science forum·2014· 4 cited
High quality and high speed cutting of 4H-SiC JFET wafers including PCM structures by using Thermal Laser Separation
MRS Proceedings·2014· 7 cited
Influence of ion implantation in SiC on the channel mobility in lateral n-channel MOSFETs
ECS Meeting Abstracts·2013Open Access
Influence of Ion Implantation in SiC on the Channel Mobility in Lateral N-Channel MOSFETs
ECS Transactions·2013· 9 citedOpen Access
Apertureless SNOM imaging of the surface phonon polariton waves: what do we measure?
Applied Physics A·2013· 11 cited
Conduction mechanisms in thermal nitride and dry gate oxides grown on 4H-SiC
Microelectronics Reliability·2013· 16 cited
Simulation and design optimization of transparent heaters for spectroscopic micro cells
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2013· 1 cited
Improving electric behavior and simplifying production of Si-based diodes by using thermal laser separation
2013· 3 cited
Comparative Study of n-LIGBT and n-LDMOS Structures on 4H-SiC
Materials science forum·2013· 2 cited
Correlation of Interface Characteristics to Electron Mobility in Channel-Implanted 4H-SiC Mosfets
Materials science forum·2013· 6 cited
Scanning Head for the Apertureless near Field Optical Microscope
Modern Instrumentation·2013· 8 citedOpen Access
Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
Materials science forum·2012· 11 cited
Enhancements in resizing single crystalline silicon wafers up to 450 mm by using thermal laser separation
2012· 5 cited
Solid-phase epitaxy of silicon amorphized by implantation of the alkali elements rubidium and cesium
AIP conference proceedings·2012· 1 cited
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Frequent Co-authors

L. Frey(9), K. Haberger(6), C. Lehrer(5), P. Pichler(5), K. Müller(5), J. Gyulai(4), Anton J. Bauer(4), G. Prinke(4), H. Glawischnig(3), Horst Zimmermann(3), P. Petrík(3), László Péter Biró(3), M. Fried(3), T. Lohner(3), Claus M. Schneider(3), Klaus H. Hoffmann(3), R. Henkelmann(3), F. Jahnel(3), Z. Ouennoughi(3), A. Sellai(3)