Masaharu Edo

Fuji Electric (Japan) — Japan

Physics and Astronomy · Physical Sciences

23h-index1.5kcitations103works4.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(77), Semiconductor materials and devices(52), Ga2O3 and related materials(17), Silicon Carbide Semiconductor Technologies(16), Advanced DC-DC Converters(12)

Publications103 total

Nitrogen-Vacancy Center Hybridization with External Emitters Leading to Improved Sensing Capabilities
2025
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
2025
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam
IEEE Journal of the Electron Devices Society·2025Open Access
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted <i>p</i>-type GaN layer
Journal of Applied Physics·2024· 6 citedOpen Access
Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Journal of Applied Physics·2024· 10 citedOpen Access
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
physica status solidi (b)·2024· 10 cited
Mobility enhancement in GaN-MOSFETs by surface Al doping
2023
Changes In Grip Strength And Health Status After One Year Of Patients With Rheumatoid Arthritis
Medicine & Science in Sports & Exercise·2023
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
2023· 1 citedOpen Access
Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N
2023· 1 cited
Impact of high-temperature Mg-implantation on defects and dopants distribution in GaN
Journal of Applied Physics·2023· 6 cited
Theoretical Study of the Influence of GaO&lt;sub&gt;x&lt;/sub&gt; Layer on the SiO&lt;sub&gt;2&lt;/sub&gt;/GaN Interface
2022
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
Journal of Applied Physics·2022· 15 citedOpen Access
Improved minority carrier lifetime in p-type GaN segments prepared by vacancy-guided redistribution of Mg
Applied Physics Letters·2021· 30 cited
Dopant activation process in Mg-implanted GaN studied by monoenergetic positron beam
Scientific Reports·2021· 25 citedOpen Access
Study of Mg activation process in Mg-implanted GaN by means of positron annihilation
The Japan Society of Applied Physics·2021
Calculation of interface trap level at GaN/SiO 2 interface
The Japan Society of Applied Physics·2021
Spatially resolved CL of p-type ion-implanted GaN using vacancy-guided Mg diffusion
The Japan Society of Applied Physics·2021
Effects of surface treatment and annealing for Au/Ni/n-GaN Schottky barrier diodes
Japanese Journal of Applied Physics·2021· 4 cited
High channel mobility of GaN-MOSFETs with controlled surface
The Japan Society of Applied Physics·2021
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Frequent Co-authors

Shinya Takashima(32), Ryo Tanaka(19), Katsunori Ueno(18), Akira Uedono(12), Shoji Ishibashi(12), Shigefusa F. Chichibu(10), Hideaki Matsuyama(9), Tadakatsu Ohkubo(9), E. Yonezawa(8), Kazunobu Kojima(7), Kohei Shima(7), Jun Chen(7), Takashi Sekiguchi(7), Ashutosh Kumar(7), Jun Uzuhashi(7), K. Ueno(6), Yasushi Katayama(6), Satoshi Sugahara(6), H. Nakazawa(6), Wei Yi(6)