Shoji Ishibashi

University of Tsukuba — Japan

Engineering · Physical Sciences

41h-index6.7kcitations369works2.22yr avg
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Research Topics

Semiconductor materials and devices(91), Muon and positron interactions and applications(83), GaN-based semiconductor devices and materials(63), Crystallization and Solubility Studies(56), X-ray Diffraction in Crystallography(53)

Publications369 total

Vacancy‐Type Defects in n‐Type GaN Fabricated by Low‐Dose Ion Implantation Studied by a Monoenergetic Positron Beam
physica status solidi (b)·2025· 1 citedOpen Access
Field-Effect Crystal Engineering in Proton–π-Electron Correlated Systems
Crystals·2025· 1 citedOpen Access
Emerging electro-optic molecular crystals for optoelectronic integration
arXiv (Cornell University)·2025Open Access
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by using a Monoenergetic Positron Beam
2025
Vacancy-Type Defects in HfO<sub>2</sub> Layers and Their Role in Amorphous-to-Crystalline Transition Studied by Monoenergetic Positron Beams
IEEE Transactions on Semiconductor Manufacturing·2025
Roles of Al-vacancy complexes on the luminescence spectra of low dislocation density Si-doped AlN grown by halide vapor phase epitaxy
Applied Physics Letters·2025· 4 cited
A First-principles Study on the Bias-Voltage Dependence of Surface Stress using the Effective Screening Medium Method
Journal of The Surface Finishing Society of Japan·2025Open Access
Characterization of Vacancy-Type Defects in Mg- and N-Implanted GaN by Using a Monoenergetic Positron Beam
IEEE Journal of the Electron Devices Society·2025Open Access
Vacancy-Type Defects in Thin HfO<sub>2</sub> Layers Probed by Monoenergetic Positron Beams
2024· 1 cited
Bias-dependent surface stress by density functional theory combined with the effective screening medium method
Physical review. B./Physical review. B·2024· 3 cited
Unveiling High Electro‐Optic Performance in a Proton–π‐Electron‐Coupled Ferroelectric Crystal
Advanced Electronic Materials·2024Open Access
Vacancy-Type Defects and Oxygen Incorporation in NiAl for Advanced Interconnects Probed by Monoenergetic Positron Beams and Atom Probe Tomography
ACS Applied Electronic Materials·2024· 1 cited
Impacts of vacancy complexes on the room-temperature photoluminescence lifetimes of state-of-the-art GaN substrates, epitaxial layers, and Mg-implanted layers
Journal of Applied Physics·2024· 10 citedOpen Access
Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method
Applied Physics Letters·2024· 2 cited
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
physica status solidi (b)·2024· 10 cited
Erratum: Computational findings of metastable ferroelectric phases of squaric acid [Phys. Rev. B 97, 184102 (2018)]
Physical review. B./Physical review. B·2023Open Access
Temporary and spatially resolved luminescence studies of p-GaN segments fabricated by vacancy-guided redistribution of Mg using sequential ion implantation of Mg and N
2023· 1 cited
A straightforward method using the sign of the piezoelectric coefficient to identify the ferroelectric switching mechanism
Scientific Reports·2023· 4 citedOpen Access
CCDC 2226488: Experimental Crystal Structure Determination
The Cambridge Structural Database·2023Open Access
CCDC 2226492: Experimental Crystal Structure Determination
The Cambridge Structural Database·2023Open Access
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Frequent Co-authors

Akira Uedono(13), Kiyoyuki Terakura(12), Takashi Miyake(8), Shigefusa F. Chichibu(8), Kazunobu Kojima(6), Shinya Takashima(6), Masaharu Edo(6), S. Uchida(5), Tomoyuki Tamura(5), H. Takagi(4), T. Ido(4), Sachio Horiuchi(4), Masanori Kohyama(4), Katsunori Ueno(4), Akiko Kobayashi(4), Ryoichi Suzuki(4), Reiji Kumai(3), Yosuke Harashima(3), Hiori Kino(3), Hayao Kobayashi(3)