Jiejie Zhu

Xidian University — China

Physics and Astronomy · Physical Sciences

26h-index3.5kcitations151works4.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(95), Ga2O3 and related materials(60), Semiconductor materials and devices(48), Radio Frequency Integrated Circuit Design(23), ZnO doping and properties(18)

Publications151 total

Performance Analysis and Insights into Schottky-Gate and Insulated-Gate GaN-on-Si RF Switch Devices: A Comparative Study on RF Isolation
Chinese Physics B·2025
Investigation of anomalous positive bias temperature instability in GaN MIS-HEMTs with PEALD SiNx gate dielectrics
Applied Physics Letters·2025
A High-Efficiency Fully Integrated GaN-on-Si Power Amplifier Using Drain Current Scaling Factor
IEEE Microwave and Wireless Technology Letters·2025
Threshold Coupling AlGaN/GaN HEMT Incorporating a Composition-Modulated Barrier for High-Voltage and High-Linearity Application
IEEE Transactions on Electron Devices·2025
Industrialization-oriented preparation of networked carbon nanotube films and synergistic optimization of “layer-intercalated” transistors
Applied Surface Science·2025
Trap-suppressed channel temperature measurement and thermal resistance characterization model for GaN HEMTs
Applied Physics Letters·2025
High-performance SiN/AlGaN/GaN MIS-HEMTs on Si substrate with LPCVD-SiN passivation and n+-InGaN ohmic contacts
Science China Information Sciences·2025
Temperature-dependent characteristics and mechanisms in thin-barrier AlGaN/GaN MIS-HEMTs with LPCVD-SiN passivation layer
Microelectronics Reliability·2025
Impact of Temperature on Threshold Voltage Drift in AlN/GaN MIS-HEMTs
2025
High-Efficiency AlN/GaN HEMTs With High-Quality Stacked Gate Dielectrics on Si Substrate for K- and Ka-Band Applications
IEEE Transactions on Electron Devices·2025· 1 cited
Multidimensional validation of low-damage BCl<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" altimg="si13.svg" display="inline" id="d1e179"><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:math>/Ar atomic layer etching for AlGaN/GaN HEMTs
Materials Science in Semiconductor Processing·2025· 2 cited
High RF Performance Enhancement-Mode Thin-Barrier AlGaN/GaN HEMTs on Si Substrate for Low-Voltage Applications
IEEE Transactions on Electron Devices·2025· 9 cited
Design and Simulation of Enclosed Gate p-GaN/AlN/GaN HEMTS with Insights into Frequency-Performance Trends for RF Applications
2025
Effect of Fin Dimensions on the Performance of Gan-on-Si Fin-HEMTs
2025
Al2O3/AlN/GaN MOS-HEMTs on 6-inch silicon substrate with high transconductance and state-of-the-art fmax × LG
Science China Information Sciences·2025· 3 cited
High RF Performance AlGaN/GaN HEMTs on 6-in Si Substrate for Low Voltage Applications
IEEE Electron Device Letters·2025· 10 cited
Gate leakage mechanisms in Al<sub>2</sub>O<sub>3</sub>/SiN/AlN/GaN MIS-HEMTs on Si substrates
Chinese Physics B·2025· 1 cited
Industrialization-Oriented Preparation of Networked Carbon Nanotube Films and Synergistic Optimization of “Iayer-Intercalated” Transistors
SSRN Electronic Journal·2025Open Access
Large Bandgap (6,5) Carbon Nanotubes Suppress Band-to-Band Tunneling for Ultra-Low-Power Thin-Film Transistors
SSRN Electronic Journal·2025Open Access
Simulation study of a novel GaN on Si quasi-vertical reverse-conducting insulated gate bipolar transistor
Semiconductor Science and Technology·2024
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Frequent Co-authors

Xiaohua Ma(26), Bin Hou(25), Yue Hao(24), Ling Yang(20), Qing Zhu(18), Minhan Mi(15), Meng Zhang(13), Lixiang Chen(10), Xiaowei Zhou(9), Zhigeng Pan(7), Mei Wu(7), Ruigang Yang(6), Pengfei Wang(6), Yang Lu(6), Siyu Liu(5), Ling Lv(5), Marshall F. Tappen(4), Weiwei Chen(4), Yue Hao(3), Yuwei Zhou(3)