Jonathan J. Wierer

North Carolina State University — United States

Physics and Astronomy · Physical Sciences

33h-index5.6kcitations154works1.42yr avg
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Research Topics

GaN-based semiconductor devices and materials(120), Semiconductor Quantum Structures and Devices(54), Ga2O3 and related materials(43), Semiconductor materials and devices(37), ZnO doping and properties(29)

Publications154 total

<i>(Invited)</i> Development of Bipolar Semiconductor Devices for a III-N Material System
ECS Meeting Abstracts·2025
Surface treatments affect GaN surface quantum well emission
Applied Physics Letters·2025
Efficient calculations of phonon-assisted Auger recombination in InGaN/GaN quantum wells based on the effective-bond orbital model
Journal of Applied Physics·2025Open Access
Process temperature dependence of sputtered MgO/<i>n</i>-type GaN metal–oxide–semiconductor capacitors
Journal of Applied Physics·2025Open Access
Visible-spectrum (405–505 nm) low-temperature-deposited deuterated (D) SiNx-SiOy waveguides
Applied Physics Letters·2025
Optical and structural characteristics of AlInN/GaN superlattices with varying AlInN fractions
Journal of Crystal Growth·2025Open Access
Comment on “Structural and optical characterization of thin AlInN films on c-plane GaN substrates” [J. Appl. Phys. 134, 075301 (2023)]
Journal of Applied Physics·2024Open Access
Light-Triggered, Enhancement-Mode AlInN/GaN HEMTs With Sub-Microsecond Switching Times
IEEE Electron Device Letters·2024· 9 cited
High Bandwidth GaN-Based Micro-LEDs at Temperatures up to 400  <sup>∘</sup> C
IEEE Photonics Technology Letters·2024· 4 cited
Growth and characterization of AlInN/GaN superlattices
Journal of Crystal Growth·2024· 3 cited
High Temperature and Large Bandwidth Blue InGaN/GaN Micro-LEDs
2024· 1 cited
Recombination Rate Analysis of High-Speed Blue InGaN/GaN micro-LEDs at Elevated Temperatures
2024
Enhancement-Mode AlInN/GaN High-Electron-Mobility Transistors Enabled by Thermally Oxidized Gates
IEEE Transactions on Electron Devices·2023· 4 cited
Structural and optical characterization of thin AlInN films on c-plane GaN substrates
Journal of Applied Physics·2023· 6 cited
Thermal oxidation of lattice mismatched Al1-xInxN films on GaN
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 4 citedOpen Access
Electrical Performance of Sputtered Epitaxial Magnesium Oxide on n-Type Gallium Nitride Metal–Oxide–Semiconductor Devices
IEEE Transactions on Electron Devices·2023· 3 cited
Anisotropic Etching of InGaN Thin Films with Photoelectrochemical Etching to Form Quantum Dots
Materials·2023Open Access
Recombination Rate Analysis of InGaN-Based Red-Emitting Light-Emitting Diodes
IEEE Journal of Quantum Electronics·2023· 13 cited
Vertical III-nitride thin-film power diode
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
High extraction efficiency ultraviolet light-emitting diode
OSTI OAI (U.S. Department of Energy Office of Scientific and Technical Information)·2023Open Access
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Frequent Co-authors

Mary H. Crawford(11), Daniel Koleske(11), Andrew A. Allerman(11), Michael R. Krames(9), Michael W. Moseley(9), Andrew Armstrong(9), Nathan F. Gardner(8), Nelson Tansu(8), Jeffrey Y. Tsao(6), P. Martin(6), George T. Wang(6), D. A. Steigerwald(5), S. A. Stockman(5), Jeramy Ray Dickerson(5), Robert Kaplar(5), A. J. Fischer(5), N. Holonyak(5), Wei Sun(5), M. J. Ludowise(4), Arthur Fischer(4)