M. J. Ludowise

Physics and Astronomy · Physical Sciences

31h-index4.5kcitations113works0.02yr avg
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Research Topics

Semiconductor Quantum Structures and Devices(76), Semiconductor Lasers and Optical Devices(30), Semiconductor materials and devices(26), GaN-based semiconductor devices and materials(20), Advanced Semiconductor Detectors and Materials(19)

Publications113 total

Visible-Light Laser Oscillation in Indirect- AlxGal -xAs (77 K)
2015
High‐Concentration Cassegrainian Solar Cell Modules and Arrays
2010· 2 cited
High concentration (2500 suns), high throughput, automated flash tester with calibrated color balance and intensity control
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2008· 1 cited
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE·2004· 4 cited
High-flux and high-efficiency nitride-based light-emitting devices
2003· 1 cited
Optical cavity effects in InGaN/GaN quantum-well-heterostructure flip-chip light-emitting diodes
Applied Physics Letters·2003· 137 cited
High power edge-emitting light emitting diodes at 1.5 μm with extremely low back facet feedback
2002
Wafer bonding of InP and GaAs: interface characterization and device applications
2002· 3 cited
Theoretical and experimental studies of the effects of strain on the performance of InP/InGaAs SCH-MQW lasers
2002
High speed modulation of InP-based strained quantum well lasers
2002
High Power LEDs - Technology Status and Market Applications
physica status solidi (a)·2002· 224 cited
High-Power III-Nitride Emitters for Solid-State Lighting
physica status solidi (a)·2002· 66 cited
Illumination with solid state lighting technology
IEEE Journal of Selected Topics in Quantum Electronics·2002· 1.1k cited
High-power AlGaInN flip-chip light-emitting diodes
Applied Physics Letters·2001· 413 cited
High-brightness A1GaInN light-emitting diodes
2000· 3 cited
High-efficiency InGaN MQW blue and green LEDs
Journal of Crystal Growth·1998· 46 cited
Hydrogen-decorated lattice defects in proton implanted GaN
Applied Physics Letters·1998· 52 cited
Vibrational Spectroscopy and Thermal Stability of Implanted Hydrogen in GaN
APS·1998
Ion Yield, Sputter Rate, and Sims Matrix Effects in Quantitative Analysis of (Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>0.5</sub>N<sub>0.5</sub>
MRS Proceedings·1998· 2 cited
Patterning of GaN in high-density Cl{sub 2}- and BCl{sub 3}-based plasmas
1997Open Access
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Frequent Co-authors

N. Holonyak(16), W. T. Dietze(14), C. R. Lewis(10), C. B. Cooper(7), J. J. Coleman(7), D. A. Steigerwald(5), P. Martin(5), Michael R. Krames(5), R. R. Saxena(5), P. Bhattacharya(5), J Bhat(4), Jonathan J. Wierer(4), S. A. Stockman(4), M. D. Camras(4), Judith M. Brown(4), P. D. Wright(4), D. M. Collins(3), Serge Rudaz(3), S. J. Rosner(3), Nathan F. Gardner(3)