Y. Crosnier

Institut d'électronique de microélectronique et de nanotechnologie — France

Engineering · Physical Sciences

11h-index631citations119works0.02yr avg
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Research Topics

Radio Frequency Integrated Circuit Design(59), Semiconductor Quantum Structures and Devices(42), Semiconductor materials and devices(33), GaN-based semiconductor devices and materials(26), Advancements in Semiconductor Devices and Circuit Design(26)

Publications119 total

High performance metamorphic In/sub 0.32/Al/sub 0.68/As/In/sub 0.33/Ga/sub 0.67/As HEMTs on GaAs substrate with an inverse step InAlAs metamorphic buffer
2002· 2 cited
Novel HEMT structures for mixer applications
2002· 3 cited
60 GHz MMIC mixer using a dual-gate PM HEMT
2002· 4 cited
(Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P barrier layer grown by gas source molecular beam epitaxy for V-band (Al/sub x/Ga/sub 1-x/)/sub 0.5/In/sub 0.5/P/In/sub 0.2/Ga/sub 0.8/As/GaAs power pseudomorphic HEMT
2002
Non-linear distortion analysis of Ka BAND MMIC’s under single-tone, TWO-TONE and NPR excitations.
Ams Acta Institutional Research Repository (University of Bologna)·2002Open Access
Modélisation de HEMTs double puits pour l'intermodulation en bande Ka
HAL (Le Centre pour la Communication Scientifique Directe)·2001
Système de mesure NPR pour caractérisation non linéaire de transistors et circuits en bande Ka
HAL (Le Centre pour la Communication Scientifique Directe)·2001
Optimum Au/WSi 0.3 μm-gate-length n-HIGFETs for microwave power applications in X band
IEEE Electron Device Letters·2001
NPR comparative study of MMICs and related pHEMT at 26 GHz
HAL (Le Centre pour la Communication Scientifique Directe)·2001
Méthodologie de modélisation boîte noire générique pour fonctions non linéaires radar
HAL (Le Centre pour la Communication Scientifique Directe)·2001
0.1-μm high performance double heterojunction In0.32Al0.68As/In0.33Ga0.67As metamorphic HEMTs on GaAs
Solid-State Electronics·2000· 10 cited
Effects on the linearity in Ka band of single or double-recessed PHEMT's
IEEE Microwave and Guided Wave Letters·2000· 6 cited
Methodology for Large Signal Behavioural Modelling of Non Linear RF Circuit Easily Affordable for Industrials
2000· 1 cited
Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN
Journal of Electronic Materials·2000· 42 cited
AlGaInP barrier layer grown by gas source molecular beam epitaxy for V-band AlGaInP/InGaAs/GaAs power pseudomorphic HEMT
HAL (Le Centre pour la Communication Scientifique Directe)·2000
1W/mm GaAs pHEMT for realization of linear power amplifier in the K band.
Ams Acta Institutional Research Repository (University of Bologna)·2000Open Access
On temporal characterization and behavioural modelisation of non linear radar function
HAL (Le Centre pour la Communication Scientifique Directe)·2000
GaN MESFETs for power and high temperature applications
HAL (Le Centre pour la Communication Scientifique Directe)·2000
Influence of recess and epilayers in the 26-40 GHz band HEMT's intermodulation
HAL (Le Centre pour la Communication Scientifique Directe)·2000
10 GHz load-pull measurements for a 0,3 µm-N-HIGFET
HAL (Le Centre pour la Communication Scientifique Directe)·2000
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Frequent Co-authors

D. Théron(21), Christophe Gaquière(16), Bruno Bonté(10), G. Salmer(10), M. Zaknoune(8), B. Boudart(6), R. Allam(6), C. Kolanowski(6), Y. Cordier(5), S. Trassaert(4), E. Bourcier(4), S. Bollaert(4), O. Schuler(4), F. Mollot(4), Farid Temçamani(4), Y. Druelle(3), S. Piotrowicz(3), H. Gérard(3), D. Lippens(3), M. Lefèbvre(3)