Jeffrey Steinfeldt

Sandia National Laboratories — United States

Physics and Astronomy · Physical Sciences

8h-index259citations58works1.32yr avg
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Research Topics

GaN-based semiconductor devices and materials(31), Semiconductor materials and devices(18), Silicon Carbide Semiconductor Technologies(12), solar cell performance optimization(8), Wireless Power Transfer Systems(7)

Publications58 total

<i>(Invited)</i> Development of Bipolar Semiconductor Devices for a III-N Material System
ECS Meeting Abstracts·2025
<i>(Invited)</i> A Natural Evolution of Power Semiconductor Devices: Impact of Present and Future Development
ECS Meeting Abstracts·2025
Temperature-Agnostic Pt/Au Ohmic Contacts on <i>n</i>-Type Gallium Nitride for Self-Aligned MOSFETs
IEEE Transactions on Materials for Electron Devices·2025· 1 cited
(Invited) Common Practical Challenges in Characterization of Wide-Bandgap Semiconductors
ECS Meeting Abstracts·2024
High current density 1.2 kV class HfO<sub>2</sub>-gated vertical GaN trench MOSFETs
Applied Physics Express·2024· 8 citedOpen Access
Substrate dependence of heat dissipation in GaN p-n diodes bonded to SiC, AlN direct-bonded Cu, and diamond
2024Open Access
Reduction of Defects at or near ALD-Al2O3/GaN Interfaces for Improved Electrical Performance of GaN Power Devices
2024Open Access
Silicon Carbide Research for Energy Efficiency and National Security
2024Open Access
Portable through-metal ultrasonic power transfer using a dry-coupled detachable transmitter
Ultrasonics·2024· 8 cited
XeF2 – A new MOCVD source for removal of surface Si contamination and in-situ etching of GaN for epitaxial regrowth
2024Open Access
High-Current (390 A) Large Area Vertical GaN PN Diodes with 1600 V Breakdown
2024Open Access
Development of Medium-Voltage High-Current Vertical GaN Power Devices
2024Open Access
In-situ MOCVD Etching of GaN using XeF2 for Selective-Area-Epitaxial-Regrowth of p-type GaN for High Voltage PN Diodes
2024Open Access
Optimization of Step-Etched Junction Termination Extensions for Vertical GaN Devices
IEEE Transactions on Electron Devices·2023· 5 cited
(Invited) Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
ECS Meeting Abstracts·2023
(Invited) In-Situ MOCVD Etching of GaN Using XeF2 for Selective-Area-Epitaxial-Regrowth of p-Type GaN for High Voltage PN Diodes
ECS Meeting Abstracts·2023· 2 cited
(Invited) Recent Progress in Medium-Voltage Vertical GaN Power Devices
ECS Meeting Abstracts·2023
Etch Depth Study for Step-Etched Junction Termination Extensions in Vertical GaN Devices
2023
Advanced Design Concepts for Vertical Gallium Nitride MOSFETs
2023Open Access
Gate protection for vertical gallium nitride trench MOSFETs: The buried field shield
e-Prime - Advances in Electrical Engineering Electronics and Energy·2023· 8 citedOpen Access
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Frequent Co-authors

Robert Kaplar(31), Andrew A. Allerman(25), Andrew Binder(24), Luke Yates(23), Paul Sharps(18), Andrew Armstrong(16), Mary H. Crawford(11), Caleb Glaser(10), Brian Rummel(10), Jeramy Ray Dickerson(9), Alper Ertürk(8), Ihab El-Kady(8), Christopher Sugino(7), Richard Floyd(7), Gregory Pickrell(7), Brendan Gunning(6), H.-H. Vuong(6), M.A. Stan(5), Christian Lew Arrington(5), Christopher St. John(5)